Inventor

XIA ZHILIANG

CN192 patents

⚠️ This page may combine multiple inventors who share the name “XIA ZHILIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XIA ZHILIANG

YANGTZE MEMORY TECH CO LTD

Embedded pad structures of three-dimensional memory devices and fabrication methods thereof

Memory device using comb-like routing structure for reduced metal line loading

Semiconductor device having a spacer structure in a conductive layer and a contact structure in the spacer structure

Word line structure of three-dimensional memory device

Trench structures for three-dimensional memory devices

Word line structure of three-dimensional memory device

Openings layout of three-dimensional memory device

Methods for forming three-dimensional memory devices

Three-dimensional memory devices having polysilicon layer and bonded semiconductor structures and methods for forming the same

Three-dimensional memory devices and memory system

Contact structures for three-dimensional memory

Semiconductor devices having a conductive layer stacking with an insulating layer and a spacer structure through the conductive layer

Three-dimensional memory device with backside source contact

Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same

Staircase structure with multiple divisions for three-dimensional memory

Three-dimensional memory devices

Memory device and fabrication method thereof

Vertical memory devices

DRAM memory device with xtacking architecture

Method for fabricating three-dimensional memory device by thickening an epitaxial layer

Staircase structure in three-dimensional memory device and method for forming the same

Staircase structure in three-dimensional memory device and method for forming the same

Method for forming three-dimensional memory device with backside source contact

Three-dimensional memory devices

Three-dimensional memory device including a peripheral circuit and a memory stack

Three-dimensional memory device with backside source contact

Methods for bonding semiconductor structures and semiconductor devices thereof

3D NAND memory device and method of forming the same

Staircase structure in three-dimensional memory device and method for forming the same

Three-dimensional memory device and method for forming the same

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory device having a shielding layer and method for forming the same

Memory device using comb-like routing structure for reduced metal line loading

Memory device using comb-like routing structure for reduced metal line loading

Method for forming a three-dimensional memory device

Three-dimensional memory device and method for forming the same

Three-dimensional memory device and method for forming the same

Memory structure and method for forming the same

Openings layout of three-dimensional memory device

Openings layout of three-dimensional memory device

Methods for reducing defects in semiconductor plug in three-dimensional memory device

Method and structure for cutting dense line patterns using self-aligned double patterning

Tunneling field effect transistor 3D NAND data cell structure and method for forming the same

Memory devices and methods for forming the same

Three-dimensional memory devices having semiconductor assemblies bonded by bonding layer and methods for forming the same

SAMSUNG ELECTRONICS CO LTD

Semiconductor device having channel holes

Non-volatile memory devices including charge storage layers

YUN JANG-GN

Vertical memory devices and methods of manufacturing the same

PARK SE-JUN

Semiconductor devices including a conductive pattern contacting a channel pattern and methods of manufacturing the same

YUN JANG GN

Vertical memory devices and methods of manufacturing the same