Inventor
HUO ZONGLIANG
CN152 patents
⚠️ This page may combine multiple inventors who share the name “HUO ZONGLIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
41 patentsUS10510415B1Dec 17, 2019
Memory device using comb-like routing structure for reduced metal line loading
YANGTZE MEMORY TECH CO LTD36 citations94
US10559592B1Feb 11, 2020
Memory device and forming method thereof
YANGTZE MEMORY TECH CO LTD14 citations86
US11195846B2Dec 7, 2021
Staircase structures for three-dimensional memory device double-sided routing
YANGTZE MEMORY TECH CO LTD8 citations84
US10892275B2Jan 12, 2021
Stacked connections in 3D memory and methods of making the same
YANGTZE MEMORY TECH CO LTD4 citations84
US11222903B2Jan 11, 2022
Word line structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD4 citations83
US10868031B2Dec 15, 2020
Multiple-stack three-dimensional memory device and fabrication method thereof
YANGTZE MEMORY TECH CO LTD5 citations83
US10727245B2Jul 28, 2020
Trench structures for three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD5 citations83
US10651192B2May 12, 2020
Word line structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD4 citations83
US10804283B2Oct 13, 2020
Openings layout of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD8 citations82
US12255181B2Mar 18, 2025
Methods for forming three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD2 citations75
US12136618B2Nov 5, 2024
Three-dimensional memory device with backside source contact
YANGTZE MEMORY TECH CO LTD2 citations73
US11963356B2Apr 16, 2024
Three-dimensional memory device without gate line slits and method for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11626416B2Apr 11, 2023
Method for forming three-dimensional memory device with backside source contact
YANGTZE MEMORY TECH CO LTD2 citations73
US11574922B2Feb 7, 2023
Three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD3 citations73
US11456290B2Sep 27, 2022
Three-dimensional memory device with backside source contact
YANGTZE MEMORY TECH CO LTD3 citations73
US11380629B2Jul 5, 2022
Methods for forming three-dimensional memory devices with supporting structure for staircase region
YANGTZE MEMORY TECH CO LTD5 citations73
US11271007B2Mar 8, 2022
Three-dimensional memory and fabrication method thereof
YANGTZE MEMORY TECH CO LTD3 citations73
US11257831B2Feb 22, 2022
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD3 citations73
US11251195B2Feb 15, 2022
Three-dimensional memory device without gate line slits and method for forming the same
YANGTZE MEMORY TECH CO LTD4 citations73
US11227871B2Jan 18, 2022
Three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD4 citations73
US11211394B2Dec 28, 2021
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD3 citations73
US11183512B2Nov 23, 2021
Methods for forming three-dimensional memory device with support structure and resulting three-dimensional memory device
YANGTZE MEMORY TECH CO LTD2 citations73
US11114458B2Sep 7, 2021
Three-dimensional memory device with support structures in gate line slits and methods for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11094712B2Aug 17, 2021
Three-dimensional memory device with support structures in slit structures and method for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11043506B2Jun 22, 2021
Three-dimensional memory device having a shielding layer and method for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11031413B2Jun 8, 2021
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD4 citations73
US10943916B2Mar 9, 2021
Method for manufacturing three-dimensional memory structure
YANGTZE MEMORY TECH CO LTD4 citations73
US10878911B2Dec 29, 2020
Memory device using comb-like routing structure for reduced metal line loading
YANGTZE MEMORY TECH CO LTD1 citations73
US10784225B2Sep 22, 2020
Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same
YANGTZE MEMORY TECH CO LTD4 citations73
US10762965B2Sep 1, 2020
Memory device using comb-like routing structure for reduced metal line loading
YANGTZE MEMORY TECH CO LTD2 citations73
US11903195B2Feb 13, 2024
Openings layout of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD2 citations71
US11574919B2Feb 7, 2023
Openings layout of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD2 citations71
US11043565B2Jun 22, 2021
Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same
YANGTZE MEMORY TECH CO LTD4 citations71
US10727056B2Jul 28, 2020
Method and structure for cutting dense line patterns using self-aligned double patterning
YANGTZE MEMORY TECH CO LTD3 citations70
US10600490B1Mar 24, 2020
Programming of memory cells in three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD2 citations70
US12520486B2Jan 6, 2026
Memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD1 citations64
US12262533B2Mar 25, 2025
Dynamic flash memory (DFM) with multi-cells
YANGTZE MEMORY TECH CO LTD1 citations64
US12593445B2Mar 31, 2026
Control gate structures in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations63
US12526996B2Jan 13, 2026
Three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD0 citations63
US12432921B2Sep 30, 2025
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations63
US12402313B2Aug 26, 2025
Methods for forming three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations63
INST OF MICROELECTRONICS CAS
6 patentsUS9613981B2Apr 4, 2017
Vertical channel-type 3D semiconductor memory device and method for manufacturing the same
INST OF MICROELECTRONICS CAS16 citations93
US10573658B2Feb 25, 2020
Method of manufacturing three-dimensional vertical and semiconductor device
INST OF MICROELECTRONICS CAS2 citations73
US10475807B2Nov 12, 2019
Three-dimensional memory device and manufacturing method thereof
INST OF MICROELECTRONICS CAS2 citations73
US10373968B2Aug 6, 2019
3-D semiconductor device and method for manufacturing the same
INST OF MICROELECTRONICS CAS2 citations73
US9437609B2Sep 6, 2016
Vertical channel-type 3D semiconductor memory device and method for manufacturing the same
INST OF MICROELECTRONICS CAS4 citations73
US10644020B2May 5, 2020
Three-dimensional semiconductor memory device with a substrate contact region and method of manufacturing the same
INST OF MICROELECTRONICS CAS6 citations72
HUO ZONGLIANG
3 patentsUS9000409B2Apr 7, 2015
3D semiconductor memory device and manufacturing method thereof
HUO ZONGLIANG23 citations92
US9070872B2Jun 30, 2015
Method for manufacturing three-dimensional semiconductor memory device
HUO ZONGLIANG9 citations84
US8927963B2Jan 6, 2015
Semiconductor memory cell, device, and method for manufacturing the same
HUO ZONGLIANG4 citations73
Showing the top 50 of 152 patents by PatentIndex Score.