P

Inventor

HUO ZONGLIANG

CN152 patents
⚠️ This page may combine multiple inventors who share the name “HUO ZONGLIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

41 patents
US10510415B1Dec 17, 2019

Memory device using comb-like routing structure for reduced metal line loading

YANGTZE MEMORY TECH CO LTD36 citations94
US10559592B1Feb 11, 2020

Memory device and forming method thereof

YANGTZE MEMORY TECH CO LTD14 citations86
US11195846B2Dec 7, 2021

Staircase structures for three-dimensional memory device double-sided routing

YANGTZE MEMORY TECH CO LTD8 citations84
US10892275B2Jan 12, 2021

Stacked connections in 3D memory and methods of making the same

YANGTZE MEMORY TECH CO LTD4 citations84
US11222903B2Jan 11, 2022

Word line structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD4 citations83
US10868031B2Dec 15, 2020

Multiple-stack three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD5 citations83
US10727245B2Jul 28, 2020

Trench structures for three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD5 citations83
US10651192B2May 12, 2020

Word line structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD4 citations83
US10804283B2Oct 13, 2020

Openings layout of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD8 citations82
US12255181B2Mar 18, 2025

Methods for forming three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD2 citations75
US12136618B2Nov 5, 2024

Three-dimensional memory device with backside source contact

YANGTZE MEMORY TECH CO LTD2 citations73
US11963356B2Apr 16, 2024

Three-dimensional memory device without gate line slits and method for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US11626416B2Apr 11, 2023

Method for forming three-dimensional memory device with backside source contact

YANGTZE MEMORY TECH CO LTD2 citations73
US11574922B2Feb 7, 2023

Three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD3 citations73
US11456290B2Sep 27, 2022

Three-dimensional memory device with backside source contact

YANGTZE MEMORY TECH CO LTD3 citations73
US11380629B2Jul 5, 2022

Methods for forming three-dimensional memory devices with supporting structure for staircase region

YANGTZE MEMORY TECH CO LTD5 citations73
US11271007B2Mar 8, 2022

Three-dimensional memory and fabrication method thereof

YANGTZE MEMORY TECH CO LTD3 citations73
US11257831B2Feb 22, 2022

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD3 citations73
US11251195B2Feb 15, 2022

Three-dimensional memory device without gate line slits and method for forming the same

YANGTZE MEMORY TECH CO LTD4 citations73
US11227871B2Jan 18, 2022

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD4 citations73
US11211394B2Dec 28, 2021

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD3 citations73
US11183512B2Nov 23, 2021

Methods for forming three-dimensional memory device with support structure and resulting three-dimensional memory device

YANGTZE MEMORY TECH CO LTD2 citations73
US11114458B2Sep 7, 2021

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US11094712B2Aug 17, 2021

Three-dimensional memory device with support structures in slit structures and method for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US11043506B2Jun 22, 2021

Three-dimensional memory device having a shielding layer and method for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US11031413B2Jun 8, 2021

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD4 citations73
US10943916B2Mar 9, 2021

Method for manufacturing three-dimensional memory structure

YANGTZE MEMORY TECH CO LTD4 citations73
US10878911B2Dec 29, 2020

Memory device using comb-like routing structure for reduced metal line loading

YANGTZE MEMORY TECH CO LTD1 citations73
US10784225B2Sep 22, 2020

Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same

YANGTZE MEMORY TECH CO LTD4 citations73
US10762965B2Sep 1, 2020

Memory device using comb-like routing structure for reduced metal line loading

YANGTZE MEMORY TECH CO LTD2 citations73
US11903195B2Feb 13, 2024

Openings layout of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD2 citations71
US11574919B2Feb 7, 2023

Openings layout of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD2 citations71
US11043565B2Jun 22, 2021

Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

YANGTZE MEMORY TECH CO LTD4 citations71
US10727056B2Jul 28, 2020

Method and structure for cutting dense line patterns using self-aligned double patterning

YANGTZE MEMORY TECH CO LTD3 citations70
US10600490B1Mar 24, 2020

Programming of memory cells in three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD2 citations70
US12520486B2Jan 6, 2026

Memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations64
US12262533B2Mar 25, 2025

Dynamic flash memory (DFM) with multi-cells

YANGTZE MEMORY TECH CO LTD1 citations64
US12593445B2Mar 31, 2026

Control gate structures in three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations63
US12526996B2Jan 13, 2026

Three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD0 citations63
US12432921B2Sep 30, 2025

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations63
US12402313B2Aug 26, 2025

Methods for forming three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations63

INST OF MICROELECTRONICS CAS

6 patents

HUO ZONGLIANG

3 patents

Showing the top 50 of 152 patents by PatentIndex Score.