P

Inventor

CHANG MING-HUA

TW24 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MING-HUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

20 patents
US8853060B1Oct 7, 2014

Epitaxial process

UNITED MICROELECTRONICS CORP44 citations93
US9397214B1Jul 19, 2016

Semiconductor device

UNITED MICROELECTRONICS CORP10 citations82
US12040393B2Jul 16, 2024

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP1 citations72
US9680022B1Jun 13, 2017

Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same

UNITED MICROELECTRONICS CORP2 citations72
US9373705B1Jun 21, 2016

Manufacturing method of a fin-shaped field effect transistor and a device thereof

UNITED MICROELECTRONICS CORP3 citations72
US9034705B2May 19, 2015

Method of forming semiconductor device

UNITED MICROELECTRONICS CORP5 citations72
US12356654B2Jul 8, 2025

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US12324181B2Jun 3, 2025

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US12274081B2Apr 8, 2025

Semiconductor structure and method for forming the same

UNITED MICROELECTRONICS CORP0 citations62
US12261052B2Mar 25, 2025

High electron mobility transistor and fabricating method of the same

UNITED MICROELECTRONICS CORP0 citations62
US12218229B2Feb 4, 2025

Semiconductor structure and method for forming the same

UNITED MICROELECTRONICS CORP0 citations62
US12040392B2Jul 16, 2024

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US12002681B2Jun 4, 2024

High electron mobility transistor and fabricating method of the same

UNITED MICROELECTRONICS CORP0 citations62
US11552187B2Jan 10, 2023

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US9076652B2Jul 7, 2015

Semiconductor process for modifying shape of recess

UNITED MICROELECTRONICS CORP2 citations62
US9214551B2Dec 15, 2015

Method for fabricating semiconductor device, and semiconductor device made thereby

UNITED MICROELECTRONICS CORP2 citations61
US9966468B2May 8, 2018

Semiconductor device having reverse U-shaped epitaxial layer and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations52
US9899498B2Feb 20, 2018

Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same

UNITED MICROELECTRONICS CORP1 citations51
US9660086B2May 23, 2017

Fin-shaped field effect transistor

UNITED MICROELECTRONICS CORP0 citations51
US9263579B2Feb 16, 2016

Semiconductor process for modifying shape of recess

UNITED MICROELECTRONICS CORP0 citations51

GLORIOLE ELECTROPTIC TECHNOLOGY CORP

3 patents

UNIV NAT CENTRAL

1 patent