Inventor

SAGGIO MARIO GIUSEPPE

IT59 patents

⚠️ This page may combine multiple inventors who share the name “SAGGIO MARIO GIUSEPPE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAGGIO MARIO GIUSEPPE

ST MICROELECTRONICS SRL

Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereof

Vertical-conduction integrated electronic device and method for manufacturing thereof

Integrated power device having a start-up structure

4H—SiC electronic device with improved short-circuit performances, and manufacturing method thereof

Manufacturing method of a semiconductor device with efficient edge structure

Silicon carbide-based electronic device and method of manufacturing the same

Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device

Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devices

Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device

Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devices

4H-SiC electronic device with improved short-circuit performances, and manufacturing method thereof

Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereof

Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereof

Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereof

Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained

Manufacturing method of a semiconductor device with efficient edge structure

MOSFET device with shielding region and manufacturing method thereof

MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof

Scalable MPS device based on SiC

Manufacturing method of a semiconductor device with efficient edge structure

Manufacturing method of a semiconductor device with efficient edge structure

MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof

MOSFET device with shielding region and manufacturing method thereof

Method for manufacturing a SiC electronic device with reduced handling steps, and sic electronic device

Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device

Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power device

Silicon carbide power device with improved robustness and corresponding manufacturing process

Silicon carbide power device with improved robustness and corresponding manufacturing process

Silicon carbide-based electronic device and method of manufacturing the same

Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatus

Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatus

Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereof

Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereof

Integrated electronic device with edge-termination structure and manufacturing method thereof

Power field effect transistor and manufacturing method thereof

Scalable MPS device based on SiC

4H-SiC MOSFET device and manufacturing method thereof

MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof

Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective device

Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective device

Multi-drain semiconductor power device and edge-termination structure thereof

Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained

FRISINA FERRUCCIO

Vertical-conduction integrated electronic device and method for manufacturing thereof

Integrated electronic device with edge-termination structure and manufacturing method thereof

Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devices

SAGGIO MARIO GIUSEPPE

Multi-drain semiconductor power device and edge-termination structure thereof

Power MOSFET comprising a plurality of columnar structures defining the charge balancing region

LORENTI SIMONA

Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective device

Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective device

GUARNERA ALFIO

Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device