Inventor
LEE KYUNG-TAE
KR40 patents
⚠️ This page may combine multiple inventors who share the name “LEE KYUNG-TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS6940114B2Sep 6, 2005
Integrated circuit devices including a MIM capacitor
SAMSUNG ELECTRONICS CO LTD39 citations94
US6492260B1Dec 10, 2002
Method of fabricating damascene metal wiring
SAMSUNG ELECTRONICS CO LTD43 citations92
US6911397B2Jun 28, 2005
Method of forming dual damascene interconnection using low-k dielectric
SAMSUNG ELECTRONICS CO LTD42 citations91
US6498092B2Dec 24, 2002
Method of making a semiconductor device having dual damascene line structure using a patterned etching stopper
SAMSUNG ELECTRONICS CO LTD27 citations90
US7768128B2Aug 3, 2010
Semiconductor memory devices including a damascene wiring line
SAMSUNG ELECTRONICS CO LTD12 citations84
US6953745B2Oct 11, 2005
Void-free metal interconnection structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US7579643B2Aug 25, 2009
Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations83
US7220652B2May 22, 2007
Metal-insulator-metal capacitor and interconnecting structure
SAMSUNG ELECTRONICS CO LTD11 citations82
US6746951B2Jun 8, 2004
Bond pad of semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations81
US7208791B2Apr 24, 2007
Integrated circuit devices including a capacitor
SAMSUNG ELECTRONICS CO LTD6 citations72
US7956439B2Jun 7, 2011
Void boundary structures, semiconductor devices having the void boundary structures and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations71
US11189572B2Nov 30, 2021
Maintaining height of alignment key in semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US7560332B2Jul 14, 2009
Integrated circuit capacitor structure
SAMSUNG ELECTRONICS CO LTD4 citations62
US7351653B2Apr 1, 2008
Method for damascene process
SAMSUNG ELECTRONICS CO LTD2 citations62
US7202160B2Apr 10, 2007
Method of forming an insulating structure having an insulating interlayer and a capping layer and method of forming a metal wiring structure using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7183202B2Feb 27, 2007
Method of forming metal wiring in a semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations62
US7679123B2Mar 16, 2010
Integrated circuit devices including a capacitor
SAMSUNG ELECTRONICS CO LTD3 citations61
US7030022B2Apr 18, 2006
Method of manufacturing semiconductor device having metal interconnections of different thickness
SAMSUNG ELECTRONICS CO LTD3 citations59
US7229875B2Jun 12, 2007
Integrated circuit capacitor structure
SAMSUNG ELECTRONICS CO LTD1 citations52
AMTIXBIO CO LTD
4 patentsUS12180139B2Dec 31, 2024
Method for preparing aminoalkanoic acid derivative containing biphenyl group
AMTIXBIO CO LTD0 citations56
US12172945B2Dec 24, 2024
Aminoalkanoic acid derivative containing biphenyl group and use of the same
AMTIXBIO CO LTD0 citations56
US12129220B2Oct 29, 2024
Pharmaceutical composition comprising aminoalkanoic acid derivative containing biphenyl group
AMTIXBIO CO LTD0 citations56
US11479526B2Oct 25, 2022
Aminoalkanoic acid derivative containing biphenyl group and antifungal pharmaceutical composition comprising the same
AMTIXBIO CO LTD0 citations56
UMICORE NV
3 patentsUS11804599B2Oct 31, 2023
Precursor and method for preparing Ni based cathode material for rechargeable lithium ion batteries
UMICORE NV0 citations62
US11367872B2Jun 21, 2022
Precursor and method for preparing Ni based cathode material for rechargeable lithium ion batteries
UMICORE NV1 citations62
US11114662B2Sep 7, 2021
Precursor and method for preparing Ni based cathode material for rechargeable lithium ion batteries
UMICORE NV0 citations62