P

Inventor

LEE KYUNG-TAE

KR40 patents
⚠️ This page may combine multiple inventors who share the name “LEE KYUNG-TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

19 patents
US6940114B2Sep 6, 2005

Integrated circuit devices including a MIM capacitor

SAMSUNG ELECTRONICS CO LTD39 citations94
US6492260B1Dec 10, 2002

Method of fabricating damascene metal wiring

SAMSUNG ELECTRONICS CO LTD43 citations92
US6911397B2Jun 28, 2005

Method of forming dual damascene interconnection using low-k dielectric

SAMSUNG ELECTRONICS CO LTD42 citations91
US6498092B2Dec 24, 2002

Method of making a semiconductor device having dual damascene line structure using a patterned etching stopper

SAMSUNG ELECTRONICS CO LTD27 citations90
US7768128B2Aug 3, 2010

Semiconductor memory devices including a damascene wiring line

SAMSUNG ELECTRONICS CO LTD12 citations84
US6953745B2Oct 11, 2005

Void-free metal interconnection structure and method of forming the same

SAMSUNG ELECTRONICS CO LTD17 citations84
US7579643B2Aug 25, 2009

Capacitor having high electrostatic capacity, integrated circuit device including the capacitor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations83
US7220652B2May 22, 2007

Metal-insulator-metal capacitor and interconnecting structure

SAMSUNG ELECTRONICS CO LTD11 citations82
US6746951B2Jun 8, 2004

Bond pad of semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations81
US7208791B2Apr 24, 2007

Integrated circuit devices including a capacitor

SAMSUNG ELECTRONICS CO LTD6 citations72
US7956439B2Jun 7, 2011

Void boundary structures, semiconductor devices having the void boundary structures and methods of forming the same

SAMSUNG ELECTRONICS CO LTD6 citations71
US11189572B2Nov 30, 2021

Maintaining height of alignment key in semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US7560332B2Jul 14, 2009

Integrated circuit capacitor structure

SAMSUNG ELECTRONICS CO LTD4 citations62
US7351653B2Apr 1, 2008

Method for damascene process

SAMSUNG ELECTRONICS CO LTD2 citations62
US7202160B2Apr 10, 2007

Method of forming an insulating structure having an insulating interlayer and a capping layer and method of forming a metal wiring structure using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7183202B2Feb 27, 2007

Method of forming metal wiring in a semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations62
US7679123B2Mar 16, 2010

Integrated circuit devices including a capacitor

SAMSUNG ELECTRONICS CO LTD3 citations61
US7030022B2Apr 18, 2006

Method of manufacturing semiconductor device having metal interconnections of different thickness

SAMSUNG ELECTRONICS CO LTD3 citations59
US7229875B2Jun 12, 2007

Integrated circuit capacitor structure

SAMSUNG ELECTRONICS CO LTD1 citations52

AMTIXBIO CO LTD

4 patents

UMICORE NV

3 patents

PROJECT NOAH INC

2 patents

TRADESCO MOLD LIMITED

1 patent

STACKTECK SYSTEMS LTD

1 patent

UNIV INDUSTRY COOPERATION GROUP KYUNG HEE UNIV

1 patent

STACK TECK SYSTEMS LTD

1 patent

CELLARTGEN INC

1 patent

AHN SUNG HOON

1 patent

KOREA FOOD RES INST

1 patent

UNIV KYUNG HEE UNIV IND COOP GROUP

1 patent

COSMAXBIO CO LTD

1 patent

YU CHEONG-SIK

1 patent

HYUNDAI MOTOR CO LTD

1 patent

KIM JI HAN

1 patent