Inventor
ZHOU CHUNHUA
CN40 patents
⚠️ This page may combine multiple inventors who share the name “ZHOU CHUNHUA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD
13 patentsUS12040244B2Jul 16, 2024
Nitride semiconductor device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations62
US12218128B2Feb 4, 2025
Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations60
US12176343B2Dec 24, 2024
Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations60
US12125844B2Oct 22, 2024
Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations60
US12087763B2Sep 10, 2024
Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations60
US12074159B2Aug 27, 2024
Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations60
US12062653B2Aug 13, 2024
Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations60
US11747390B2Sep 5, 2023
Apparatus and method for measuring dynamic on-resistance of GaN-based device
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD1 citations56
US11862722B2Jan 2, 2024
Semiconductor device structures and methods of manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations52
US12289899B2Apr 29, 2025
Nitride-based semiconductor device and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations50
US12255169B2Mar 18, 2025
Nitride-based semiconductor module and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations48
US11830786B2Nov 28, 2023
Semiconductor package and method for manufacturing the same
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations47
US12038469B2Jul 16, 2024
System and method for measuring intermittent operating life of GaN-based device
INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD0 citations45
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD
9 patentsUS12125845B2Oct 22, 2024
Electronic device
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD2 citations73
US11699899B2Jul 11, 2023
Electronic device and electrostatic discharge protection circuit
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD2 citations73
US11769826B2Sep 26, 2023
Semiconductor device with asymmetric gate structure
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations61
US11515409B2Nov 29, 2022
Semiconductor device with asymmetric gate structure
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations61
US12199000B2Jan 14, 2025
Semiconductor device structures and methods of manufacturing the same
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations59
US11972996B2Apr 30, 2024
Semiconductor device structures and methods of manufacturing the same
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations59
US11784237B2Oct 10, 2023
Semiconductor devices and methods of manufacturing the same
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations59
US12040394B2Jul 16, 2024
Semiconductor device having improved gate leakage current
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations50
US11747389B2Sep 5, 2023
Device and method for measuring high electron mobility transistor
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD0 citations50
EFFICIENT POWER CONVERSION CORP
8 patentsUS10096702B2Oct 9, 2018
Multi-step surface passivation structures and methods for fabricating same
EFFICIENT POWER CONVERSION CORP7 citations83
US9837438B2Dec 5, 2017
GaN transistors with polysilicon layers used for creating additional components
EFFICIENT POWER CONVERSION CORP6 citations83
US9214461B2Dec 15, 2015
GaN transistors with polysilicon layers for creating additional components
EFFICIENT POWER CONVERSION CORP9 citations82
US10312260B2Jun 4, 2019
GaN transistors with polysilicon layers used for creating additional components
EFFICIENT POWER CONVERSION CORP3 citations72
US9171911B2Oct 27, 2015
Isolation structure in gallium nitride devices and integrated circuits
EFFICIENT POWER CONVERSION CORP6 citations72
US9214399B2Dec 15, 2015
Integrated circuit with matching threshold voltages and method for making same
EFFICIENT POWER CONVERSION CORP1 citations51
US9331191B2May 3, 2016
GaN device with reduced output capacitance and process for making same
EFFICIENT POWER CONVERSION CORP1 citations50
US9214528B2Dec 15, 2015
Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits
EFFICIENT POWER CONVERSION CORP0 citations40
CHEN JING
3 patentsUS8076699B2Dec 13, 2011
Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
CHEN JING103 citations95
US8564020B2Oct 22, 2013
Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same
CHEN JING16 citations84
US8809987B2Aug 19, 2014
Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors
CHEN JING6 citations73
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD
3 patentsUS11967521B2Apr 23, 2024
Integrated semiconductor device and method for manufacturing the same
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD0 citations61
US11967519B2Apr 23, 2024
Integrated semiconductor device and method for manufacturing the same
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD0 citations61
US12166114B2Dec 10, 2024
Semiconductor device structures and methods of manufacturing the same
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD0 citations49