P

Inventor

KIRCHGESSNER JAMES A

US15 patents
⚠️ This page may combine multiple inventors who share the name “KIRCHGESSNER JAMES A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FREESCALE SEMICONDUCTOR INC

8 patents
US7816221B2Oct 19, 2010

Dielectric ledge for high frequency devices

FREESCALE SEMICONDUCTOR INC12 citations83
US7803685B2Sep 28, 2010

Silicided base structure for high frequency transistors

FREESCALE SEMICONDUCTOR INC7 citations73
US7084485B2Aug 1, 2006

Method of manufacturing a semiconductor component, and semiconductor component formed thereby

FREESCALE SEMICONDUCTOR INC10 citations73
US7638386B2Dec 29, 2009

Integrated CMOS and bipolar devices method and structure

FREESCALE SEMICONDUCTOR INC2 citations60
US7611955B2Nov 3, 2009

Method of forming a bipolar transistor and semiconductor component thereof

FREESCALE SEMICONDUCTOR INC4 citations60
US7442616B2Oct 28, 2008

Method of manufacturing a bipolar transistor and bipolar transistor thereof

FREESCALE SEMICONDUCTOR INC4 citations60
US7932145B2Apr 26, 2011

Method of forming a bipolar transistor and semiconductor component thereof

FREESCALE SEMICONDUCTOR INC1 citations49
US7821103B2Oct 26, 2010

Counter-doped varactor structure and method

FREESCALE SEMICONDUCTOR INC0 citations48

MOTOROLA INC

4 patents
US6461925B1Oct 8, 2002

Method of manufacturing a heterojunction BiCMOS integrated circuit

MOTOROLA INC22 citations89
US5134082AJul 28, 1992

Method of fabricating a semiconductor structure having MOS and bipolar devices

MOTOROLA INC16 citations73
US4927775AMay 22, 1990

Method of fabricating a high performance bipolar and MOS device

MOTOROLA INC12 citations70
US4803175AFeb 7, 1989

Method of fabricating a bipolar semiconductor device with silicide contacts

MOTOROLA INC8 citations70

JOHN JAY P

3 patents
US8084786B2Dec 27, 2011

Silicided base structure for high frequency transistors

JOHN JAY P7 citations82
US8664698B2Mar 4, 2014

Bipolar transistor and method with recessed base electrode

JOHN JAY P2 citations61
US9105678B2Aug 11, 2015

Semiconductor devices with recessed base electrode

JOHN JAY P1 citations51