Inventor
FEYGENSON ANATOLY
US18 patents
⚠️ This page may combine multiple inventors who share the name “FEYGENSON ANATOLY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AT & T BELL LAB
4 patentsUS4981811AJan 1, 1991
Process for fabricating low defect polysilicon
AT & T BELL LAB28 citations91
US4987471AJan 22, 1991
High-speed dielectrically isolated devices utilizing buried silicide regions
AT & T BELL LAB7 citations74
US5288657AFeb 22, 1994
Device fabrication
AT & T BELL LAB18 citations72
US5273621ADec 28, 1993
Substantially facet-free selective epitaxial growth process
AT & T BELL LAB6 citations72
AMERICAN TELEPHONE & TELEGRAPH
3 patentsUS4839309AJun 13, 1989
Fabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusion
AMERICAN TELEPHONE & TELEGRAPH44 citations92
US4818713AApr 4, 1989
Techniques useful in fabricating semiconductor devices having submicron features
AMERICAN TELEPHONE & TELEGRAPH39 citations92
US4860085AAug 22, 1989
Submicron bipolar transistor with buried silicide region
AMERICAN TELEPHONE & TELEGRAPH19 citations73
ENPIRION INC
3 patentsUS9443839B2Sep 13, 2016
Semiconductor device including gate drivers around a periphery thereof
ENPIRION INC4 citations83
US9299691B2Mar 29, 2016
Semiconductor device including alternating source and drain regions, and respective source and drain metallic strips
ENPIRION INC9 citations83
US9553081B2Jan 24, 2017
Semiconductor device including a redistribution layer and metallic pillars coupled thereto
ENPIRION INC4 citations72