Inventor
WHEATLEY JR CARL F
US16 patents
⚠️ This page may combine multiple inventors who share the name “WHEATLEY JR CARL F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RCA CORP
11 patentsUS4532534AJul 30, 1985
MOSFET with perimeter channel
RCA CORP76 citations94
US4364073ADec 14, 1982
Power MOSFET with an anode region
RCA CORP112 citations94
US4639754AJan 27, 1987
Vertical MOSFET with diminished bipolar effects
RCA CORP43 citations92
US4260946AApr 7, 1981
Reference voltage circuit using nested diode means
RCA CORP41 citations92
US4631564ADec 23, 1986
Gate shield structure for power MOS device
RCA CORP27 citations91
US4388634AJun 14, 1983
Transistor with improved second breakdown capability
RCA CORP7 citations73
US4313971AFeb 2, 1982
Method of fabricating a Schottky barrier contact
RCA CORP17 citations73
US4677324AJun 30, 1987
Fast switch-off circuit for conductivity modulated field effect transistor
RCA CORP19 citations71
US4429284AJan 31, 1984
Operational amplifier
RCA CORP2 citations62
US4254381AMar 3, 1981
Balanced-to-single-ended signal converters
RCA CORP4 citations62
US4246551AJan 20, 1981
Multivibrator circuit
RCA CORP0 citations51
HARRIS CORP
4 patentsUS5095343AMar 10, 1992
Power MOSFET
HARRIS CORP58 citations94
US5399892AMar 21, 1995
Mesh geometry for MOS-gated semiconductor devices
HARRIS CORP27 citations92
US5468668ANov 21, 1995
Method of forming MOS-gated semiconductor devices having mesh geometry pattern
HARRIS CORP17 citations81
US5422288AJun 6, 1995
Method of doping a JFET region in a MOS-gated semiconductor device
HARRIS CORP8 citations73