Inventor

CUCHIARO JOSEPH D

US43 patents

⚠️ This page may combine multiple inventors who share the name “CUCHIARO JOSEPH D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CUCHIARO JOSEPH D

SYMETRIX CORP

Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current

Process for fabricating layered superlattice materials and making electronic devices including same

Ferroelectric flat panel displays

Ferroelectric/high dielectric constant integrated circuit and method of fabricating same

Interlayer oxide containing thin films for high dielectric constant application

Ferroelectric integrated circuit having hydrogen barrier layer

Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same

Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation

Liquid deposition methods of fabricating layered superlattice materials

Bottom electrode structure for dielectric capacitors

Integrated circuit capacitors and process for making the same

Ferroelectric and high dielectric constant transistors

Method for forming an integrated circuit

Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same

Barium strontium titanate integrated circuit capacitors and process for making the same

Low imprint ferroelectric material for long retention memory and method of making the same

Low imprint ferroelectric material for long retention memory and method of making the same

Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same

Method of fabricating ferroelectric integrated circuit using dry and wet etching

Method for fabricating ferroelectric integrated circuits

Method of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applications

PSZT for integrated circuit applications

Low imprint ferroelectric material for long retention memory and method of making the same

Integrated circuit electrode structure and process for fabricating same

Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications

Antifuse programmable element using ferroelectric material

Method and apparatus for programming antifuse elements using combined AC and DC electric fields

Metal organic precursors for transparent metal oxide thin films and method of making same

Metal organic precursors for transparent metal oxide thin films and method of making same

Ferroelectric field effect transistor, memory utilizing same, and method of operating same

Method of fabricating an integrated circuit using self-patterned thin films

Integrated circuit capacitors with barrier layer and process for making the same

Fluorescent lamp and method of manufacturing same

Process for fabricating layered superlattice materials and making electronic devices including same

Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7

Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same

Barium strontium titanate integrated circuit capacitors and process for making the same

Low imprint ferroelectric material for long retention memory and method of making the same

Ferroelectric field effect transistor, memory utilizing same, and method of operating same

Process for making an integrated circuit with high dielectric constant barium-strontium-niobium oxide

High dielectric constant barium-strontium-niobium oxides for integrated circuit applications

OLYMPUS OPTICAL CO

Process for fabricating layered superlattice materials and making electronic devices including same

Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications