Inventor
AHN JAE-GYUNG
KR26 patents
⚠️ This page may combine multiple inventors who share the name “AHN JAE-GYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG SEMICON CO LTD
6 patentsUS6096609AAug 1, 2000
ESD protection circuit and method for fabricating same using a plurality of dummy gate electrodes as a salicide mask for a drain
LG SEMICON CO LTD49 citations92
US6077736AJun 20, 2000
Method of fabricating a semiconductor device
LG SEMICON CO LTD21 citations92
US5953616ASep 14, 1999
Method of fabricating a MOS device with a salicide structure
LG SEMICON CO LTD33 citations92
US5874330AFeb 23, 1999
Method for fabricating semiconductor device
LG SEMICON CO LTD22 citations92
US6110771AAug 29, 2000
Fabrication method of a semiconductor device using self-aligned silicide CMOS having a dummy gate electrode
LG SEMICON CO LTD11 citations74
US5877532AMar 2, 1999
Semiconductor device and method of manufacturing the same
LG SEMICON CO LTD8 citations74
XILINX INC
5 patentsUS8350253B1Jan 8, 2013
Integrated circuit with stress inserts
XILINX INC39 citations92
US8354671B1Jan 15, 2013
Integrated circuit with adaptive VGG setting
XILINX INC11 citations83
US7772093B2Aug 10, 2010
Method of and circuit for protecting a transistor formed on a die
XILINX INC2 citations62
US7956385B1Jun 7, 2011
Circuit for protecting a transistor during the manufacture of an integrated circuit device
XILINX INC0 citations51
US10103139B2Oct 16, 2018
Method and design of low sheet resistance MEOL resistors
XILINX INC0 citations41
HYUNDAI ELECTRONICS IND
5 patentsUS6261910B1Jul 17, 2001
Semiconductor device and method of manufacturing the same
HYUNDAI ELECTRONICS IND6 citations74
US6242311B1Jun 5, 2001
Method of fabricating a semiconductor device with silicided gates and peripheral region
HYUNDAI ELECTRONICS IND10 citations74
US6730572B2May 4, 2004
Method of forming silicide
HYUNDAI ELECTRONICS IND12 citations70
US6362060B2Mar 26, 2002
Method for forming semiconductor device having a gate in the trench
HYUNDAI ELECTRONICS IND4 citations63
US6337254B1Jan 8, 2002
Method of forming trench isolation structure with dummy active regions and overlying discriminately doped conduction layer
HYUNDAI ELECTRONICS IND5 citations63
INTEGRATED DEVICE TECH
4 patentsUS7419748B1Sep 2, 2008
Photomask with reduced electrostatic discharge defects
INTEGRATED DEVICE TECH17 citations84
US6518135B1Feb 11, 2003
Method for forming localized halo implant regions
INTEGRATED DEVICE TECH6 citations74
US6846751B2Jan 25, 2005
Nitrogen implementation to minimize device variation
INTEGRATED DEVICE TECH2 citations54
US7388262B2Jun 17, 2008
Nitrogen implementation to minimize device variation
INTEGRATED DEVICE TECH1 citations52