P

Inventor

MA WILLIAM H

US36 patents
⚠️ This page may combine multiple inventors who share the name “MA WILLIAM H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

35 patents
US6225158B1May 1, 2001

Trench storage dynamic random access memory cell with vertical transfer device

IBM197 citations99
US6221562B1Apr 24, 2001

Resist image reversal by means of spun-on-glass

IBM113 citations98
US6184549B1Feb 6, 2001

Trench storage dynamic random access memory cell with vertical transfer device

IBM47 citations96
US6107133AAug 22, 2000

Method for making a five square vertical DRAM cell

IBM71 citations96
US5998835ADec 7, 1999

High performance MOSFET device with raised source and drain

IBM50 citations96
US5776660AJul 7, 1998

Fabrication method for high-capacitance storage node structures

IBM64 citations96
US6190988B1Feb 20, 2001

Method for a controlled bottle trench for a dram storage node

IBM64 citations95
US4350578ASep 21, 1982

Cathode for etching

IBM85 citations94
US6596597B2Jul 22, 2003

Method of manufacturing dual gate logic devices

IBM18 citations93
US6319759B1Nov 20, 2001

Method for making oxide

IBM22 citations93
US6262450B1Jul 17, 2001

DRAM stack capacitor with vias and conductive connection extending from above conductive lines to the substrate

IBM27 citations93
US6207540B1Mar 27, 2001

Method for manufacturing high performance MOSFET device with raised source and drain

IBM20 citations93
US6175128B1Jan 16, 2001

Process for building borderless bitline, wordline and DRAM structure and resulting structure

IBM17 citations93
US6150230ANov 21, 2000

Trench separator for self-defining discontinuous film

IBM19 citations93
US5949700ASep 7, 1999

Five square vertical dynamic random access memory cell

IBM44 citations93
US5796573AAug 18, 1998

Overhanging separator for self-defining stacked capacitor

IBM42 citations93
US5585998ADec 17, 1996

Isolated sidewall capacitor with dual dielectric

IBM42 citations93
US6512266B1Jan 28, 2003

Method of fabricating SiO2 spacers and annealing caps

IBM40 citations92
US6500054B1Dec 31, 2002

Chemical-mechanical polishing pad conditioner

IBM51 citations92
US4667395AMay 26, 1987

Method for passivating an undercut in semiconductor device preparation

IBM31 citations92
US6333245B1Dec 25, 2001

Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer

IBM16 citations84
US6271599B1Aug 7, 2001

Wire interconnect structure for electrically and mechanically connecting an integrated circuit chip to a substrate

IBM16 citations84
US6936879B2Aug 30, 2005

Increased capacitance trench capacitor

IBM9 citations74
US6620675B2Sep 16, 2003

Increased capacitance trench capacitor

IBM11 citations74
US6544832B2Apr 8, 2003

Method of fabricating a stack capacitor DRAM

IBM7 citations74
US6261933B1Jul 17, 2001

Process for building borderless bitline, wordline amd DRAM structure

IBM8 citations74
US6002575ADec 14, 1999

Adherent separator for self-defining discontinuous film

IBM9 citations74
US6228705B1May 8, 2001

Overlay process for fabricating a semiconductor device

IBM9 citations73
US6891226B2May 10, 2005

Dual gate logic device

IBM4 citations63
US6420748B1Jul 16, 2002

Borderless bitline and wordline DRAM structure

IBM2 citations63
US6391426B1May 21, 2002

High capacitance storage node structures

IBM2 citations63
US6153491ANov 28, 2000

Overhanging separator for self-defining discontinuous film

IBM4 citations63
US6268259B1Jul 31, 2001

Overhanging separator for self-defining stacked capacitor

IBM1 citations52
US6191469B1Feb 20, 2001

Overhanging separator for self-defining discontinuous film

IBM0 citations52
US5955756ASep 21, 1999

Trench separator for self-defining discontinuous film

IBM0 citations52

INTERNAITONAL BUSINESS MACHINE

1 patent