Inventor
MA WILLIAM H
US36 patents
⚠️ This page may combine multiple inventors who share the name “MA WILLIAM H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
35 patentsUS6225158B1May 1, 2001
Trench storage dynamic random access memory cell with vertical transfer device
IBM197 citations99
US6221562B1Apr 24, 2001
Resist image reversal by means of spun-on-glass
IBM113 citations98
US6184549B1Feb 6, 2001
Trench storage dynamic random access memory cell with vertical transfer device
IBM47 citations96
US6107133AAug 22, 2000
Method for making a five square vertical DRAM cell
IBM71 citations96
US5998835ADec 7, 1999
High performance MOSFET device with raised source and drain
IBM50 citations96
US5776660AJul 7, 1998
Fabrication method for high-capacitance storage node structures
IBM64 citations96
US6190988B1Feb 20, 2001
Method for a controlled bottle trench for a dram storage node
IBM64 citations95
US4350578ASep 21, 1982
Cathode for etching
IBM85 citations94
US6596597B2Jul 22, 2003
Method of manufacturing dual gate logic devices
IBM18 citations93
US6319759B1Nov 20, 2001
Method for making oxide
IBM22 citations93
US6262450B1Jul 17, 2001
DRAM stack capacitor with vias and conductive connection extending from above conductive lines to the substrate
IBM27 citations93
US6207540B1Mar 27, 2001
Method for manufacturing high performance MOSFET device with raised source and drain
IBM20 citations93
US6175128B1Jan 16, 2001
Process for building borderless bitline, wordline and DRAM structure and resulting structure
IBM17 citations93
US6150230ANov 21, 2000
Trench separator for self-defining discontinuous film
IBM19 citations93
US5949700ASep 7, 1999
Five square vertical dynamic random access memory cell
IBM44 citations93
US5796573AAug 18, 1998
Overhanging separator for self-defining stacked capacitor
IBM42 citations93
US5585998ADec 17, 1996
Isolated sidewall capacitor with dual dielectric
IBM42 citations93
US6512266B1Jan 28, 2003
Method of fabricating SiO2 spacers and annealing caps
IBM40 citations92
US6500054B1Dec 31, 2002
Chemical-mechanical polishing pad conditioner
IBM51 citations92
US4667395AMay 26, 1987
Method for passivating an undercut in semiconductor device preparation
IBM31 citations92
US6333245B1Dec 25, 2001
Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer
IBM16 citations84
US6271599B1Aug 7, 2001
Wire interconnect structure for electrically and mechanically connecting an integrated circuit chip to a substrate
IBM16 citations84
US6936879B2Aug 30, 2005
Increased capacitance trench capacitor
IBM9 citations74
US6620675B2Sep 16, 2003
Increased capacitance trench capacitor
IBM11 citations74
US6544832B2Apr 8, 2003
Method of fabricating a stack capacitor DRAM
IBM7 citations74
US6261933B1Jul 17, 2001
Process for building borderless bitline, wordline amd DRAM structure
IBM8 citations74
US6002575ADec 14, 1999
Adherent separator for self-defining discontinuous film
IBM9 citations74
US6228705B1May 8, 2001
Overlay process for fabricating a semiconductor device
IBM9 citations73
US6891226B2May 10, 2005
Dual gate logic device
IBM4 citations63
US6420748B1Jul 16, 2002
Borderless bitline and wordline DRAM structure
IBM2 citations63
US6391426B1May 21, 2002
High capacitance storage node structures
IBM2 citations63
US6153491ANov 28, 2000
Overhanging separator for self-defining discontinuous film
IBM4 citations63
US6268259B1Jul 31, 2001
Overhanging separator for self-defining stacked capacitor
IBM1 citations52
US6191469B1Feb 20, 2001
Overhanging separator for self-defining discontinuous film
IBM0 citations52
US5955756ASep 21, 1999
Trench separator for self-defining discontinuous film
IBM0 citations52