Inventor
HILLMAN JOSEPH T
US50 patents
⚠️ This page may combine multiple inventors who share the name “HILLMAN JOSEPH T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
32 patentsUS6274496B1Aug 14, 2001
Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing
TOKYO ELECTRON LTD391 citations99
US5997649ADec 7, 1999
Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
TOKYO ELECTRON LTD224 citations99
US5866213AFeb 2, 1999
Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
TOKYO ELECTRON LTD140 citations99
US5834371ANov 10, 1998
Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
TOKYO ELECTRON LTD126 citations99
US6586330B1Jul 1, 2003
Method for depositing conformal nitrified tantalum silicide films by thermal CVD
TOKYO ELECTRON LTD127 citations98
US6409837B1Jun 25, 2002
Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
TOKYO ELECTRON LTD97 citations98
US5926737AJul 20, 1999
Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
TOKYO ELECTRON LTD213 citations98
US6548112B1Apr 15, 2003
Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber
TOKYO ELECTRON LTD76 citations97
US6183564B1Feb 6, 2001
Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
TOKYO ELECTRON LTD502 citations97
US6143128ANov 7, 2000
Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
TOKYO ELECTRON LTD53 citations96
US6093645AJul 25, 2000
Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation
TOKYO ELECTRON LTD54 citations96
US6455414B1Sep 24, 2002
Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayers
TOKYO ELECTRON LTD65 citations93
US7521089B2Apr 21, 2009
Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers
TOKYO ELECTRON LTD48 citations92
US6635569B1Oct 21, 2003
Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
TOKYO ELECTRON LTD24 citations92
US6500761B1Dec 31, 2002
Method for improving the adhesion and durability of CVD tantalum and tantalum nitride modulated films by plasma treatment
TOKYO ELECTRON LTD21 citations92
US6220202B1Apr 24, 2001
Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition
TOKYO ELECTRON LTD29 citations92
US6140215AOct 31, 2000
Method and apparatus for low temperature deposition of CVD and PECVD films
TOKYO ELECTRON LTD23 citations92
US6037252AMar 14, 2000
Method of titanium nitride contact plug formation
TOKYO ELECTRON LTD35 citations92
US5989652ANov 23, 1999
Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
TOKYO ELECTRON LTD38 citations92
US5972790AOct 26, 1999
Method for forming salicides
TOKYO ELECTRON LTD24 citations92
US6482477B1Nov 19, 2002
Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers thereto
TOKYO ELECTRON LTD20 citations91
US5897380AApr 27, 1999
Method for isolating a susceptor heating element from a chemical vapor deposition environment
TOKYO ELECTRON LTD19 citations91
US6090705AJul 18, 2000
Method of eliminating edge effect in chemical vapor deposition of a metal
TOKYO ELECTRON LTD19 citations90
US6302057B1Oct 16, 2001
Apparatus and method for electrically isolating an electrode in a PECVD process chamber
TOKYO ELECTRON LTD34 citations89
US6508919B1Jan 21, 2003
Optimized liners for dual damascene metal wiring
TOKYO ELECTRON LTD19 citations84
US6121140ASep 19, 2000
Method of improving surface morphology and reducing resistivity of chemical vapor deposition-metal films
TOKYO ELECTRON LTD18 citations81
US7250374B2Jul 31, 2007
System and method for processing a substrate using supercritical carbon dioxide processing
TOKYO ELECTRON LTD11 citations78
US6221770B1Apr 24, 2001
Low temperature plasma-enhanced formation of integrated circuits
TOKYO ELECTRON LTD13 citations74
US6562708B1May 13, 2003
Method for incorporating silicon into CVD metal films
TOKYO ELECTRON LTD7 citations73
US6632737B1Oct 14, 2003
Method for enhancing the adhesion of a barrier layer to a dielectric
TOKYO ELECTRON LTD5 citations62
US6730605B2May 4, 2004
Redistribution of copper deposited films
TOKYO ELECTRON LTD5 citations61
US7307019B2Dec 11, 2007
Method for supercritical carbon dioxide processing of fluoro-carbon films
TOKYO ELECTRON LTD1 citations46
SONY CORP
9 patentsUS5665640ASep 9, 1997
Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
SONY CORP128 citations99
US5567243AOct 22, 1996
Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
SONY CORP366 citations99
US5628829AMay 13, 1997
Method and apparatus for low temperature deposition of CVD and PECVD films
SONY CORP270 citations98
US5562947AOct 8, 1996
Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment
SONY CORP449 citations98
US5593511AJan 14, 1997
Method of nitridization of titanium thin films
SONY CORP58 citations96
US5567483AOct 22, 1996
Process for plasma enhanced anneal of titanium nitride
SONY CORP62 citations96
US5716870AFeb 10, 1998
Method for producing titanium thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
SONY CORP29 citations92
US5610106AMar 11, 1997
Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
SONY CORP48 citations92
US5575856ANov 19, 1996
Thermal cycle resistant seal and method of sealing for use with semiconductor wafer processing apparatus
SONY CORP7 citations68