Inventor
ROTTSTEGGE JOERG
DE17 patents
Patents
17 patentsUS6893972B2May 17, 2005
Process for sidewall amplification of resist structures and for the production of structures having reduced structure size
INFINEON TECHNOLOGIES AG280 citations97
US6770423B2Aug 3, 2004
Negative resist process with simultaneous development and silylation
INFINEON TECHNOLOGIES AG7 citations72
US7052820B2May 30, 2006
Silicon-containing resist for photolithography
INFINEON TECHNOLOGIES AG3 citations61
US7045274B2May 16, 2006
Process for structuring a photoresist by UV at less than 160 NM and then aromatic and/or alicyclic amplification
INFINEON TECHNOLOGIES AG2 citations61
US6998215B2Feb 14, 2006
Negative resist process with simultaneous development and chemical consolidation of resist structures
INFINEON TECHNOLOGIES AG2 citations61
US6946236B2Sep 20, 2005
Negative resist process with simultaneous development and aromatization of resist structures
INFINEON TECHNOLOGIES AG2 citations61
US6806027B2Oct 19, 2004
Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography through the use of fluorinated cinnamic acid derivatives
INFINEON TECHNOLOGIES AG5 citations61
US6759184B2Jul 6, 2004
Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers
INFINEON TECHNOLOGIES AG2 citations61
US7125640B2Oct 24, 2006
Resist for photolithography having reactive groups for subsequent modification of the resist structures
INFINEON TECHNOLOGIES AG0 citations51
US7067234B2Jun 27, 2006
Chemical consolidation of photoresists in the UV range
INFINEON TECHNOLOGIES AG0 citations51
US7041426B2May 9, 2006
Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithography
INFINEON TECHNOLOGIES AG1 citations51
US7045273B2May 16, 2006
Process for silylating photoresists in the UV range
INFINEON TECHNOLOGIES AG0 citations40
US7018784B2Mar 28, 2006
Process for increasing the etch resistance and for reducing the hole and trench width of a photoresist structure using solvent systems of low polarity
INFINEON TECHNOLOGIES AG0 citations40
US6835528B2Dec 28, 2004
Fluorine-containing photoresist having reactive anchors for chemical amplification and improved copolymerization properties
INFINEON TECHNOLOGIES AG0 citations40
US7033740B2Apr 25, 2006
Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nm
INFINEON TECHNOLOGIES AG0 citations39
US6974655B2Dec 13, 2005
Silicon resist for photolithography at short exposure wavelengths and process for making photoresists
INFINEON TECHNOLOGIES AG0 citations39
US6899997B2May 31, 2005
Process for modifying resist structures and resist films from the aqueous phase
INFINEON TECHNOLOGIES AG0 citations33