P

Inventor

SEBALD MICHAEL

DE48 patents
⚠️ This page may combine multiple inventors who share the name “SEBALD MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

25 patents
US6893972B2May 17, 2005

Process for sidewall amplification of resist structures and for the production of structures having reduced structure size

INFINEON TECHNOLOGIES AG280 citations97
US6703190B2Mar 9, 2004

Method for producing resist structures

INFINEON TECHNOLOGIES AG112 citations96
US6514663B1Feb 4, 2003

Bottom resist

INFINEON TECHNOLOGIES AG20 citations91
US6770423B2Aug 3, 2004

Negative resist process with simultaneous development and silylation

INFINEON TECHNOLOGIES AG7 citations72
US6887653B2May 3, 2005

Method for structuring a photoresist layer

INFINEON TECHNOLOGIES AG2 citations62
US6841332B2Jan 11, 2005

Photoresist compound and method for structuring a photoresist layer

INFINEON TECHNOLOGIES AG5 citations62
US6746828B2Jun 8, 2004

Process for structuring a photoresist layer

INFINEON TECHNOLOGIES AG2 citations62
US6746821B2Jun 8, 2004

Method of structuring a photoresist layer

INFINEON TECHNOLOGIES AG3 citations62
US6746827B2Jun 8, 2004

Process for structuring a photoresist layer

INFINEON TECHNOLOGIES AG5 citations62
US6740475B2May 25, 2004

Method for structuring a photoresist layer

INFINEON TECHNOLOGIES AG4 citations62
US7052820B2May 30, 2006

Silicon-containing resist for photolithography

INFINEON TECHNOLOGIES AG3 citations61
US6946236B2Sep 20, 2005

Negative resist process with simultaneous development and aromatization of resist structures

INFINEON TECHNOLOGIES AG2 citations61
US6806027B2Oct 19, 2004

Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography through the use of fluorinated cinnamic acid derivatives

INFINEON TECHNOLOGIES AG5 citations61
US6800407B2Oct 5, 2004

Method for experimentally verifying imaging errors in photomasks

INFINEON TECHNOLOGIES AG2 citations61
US6759184B2Jul 6, 2004

Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers

INFINEON TECHNOLOGIES AG2 citations61
US6696208B2Feb 24, 2004

Method for experimentally verifying imaging errors in optical exposure units

INFINEON TECHNOLOGIES AG4 citations61
US7078709B2Jul 18, 2006

Apparatus and method for proof of outgassing products

INFINEON TECHNOLOGIES AG3 citations59
US7125640B2Oct 24, 2006

Resist for photolithography having reactive groups for subsequent modification of the resist structures

INFINEON TECHNOLOGIES AG0 citations51
US7041426B2May 9, 2006

Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithography

INFINEON TECHNOLOGIES AG1 citations51
US6743572B2Jun 1, 2004

Method for structuring a photoresist layer

INFINEON TECHNOLOGIES AG1 citations51
US7220531B2May 22, 2007

Resist for electron beam lithography and a process for producing photomasks using electron beam lithography

INFINEON TECHNOLOGIES AG0 citations42
US7157189B2Jan 2, 2007

Lithographic process for reducing the lateral chromium structure loss in photomask production using chemically amplified resists

INFINEON TECHNOLOGIES AG0 citations42
US7045273B2May 16, 2006

Process for silylating photoresists in the UV range

INFINEON TECHNOLOGIES AG0 citations40
US6974655B2Dec 13, 2005

Silicon resist for photolithography at short exposure wavelengths and process for making photoresists

INFINEON TECHNOLOGIES AG0 citations39
US6899997B2May 31, 2005

Process for modifying resist structures and resist films from the aqueous phase

INFINEON TECHNOLOGIES AG0 citations33

SIEMENS AG

20 patents
US5234793AAug 10, 1993

Method for dimensionally accurate structure transfer in bilayer technique wherein a treating step with a bulging agent is employed after development

SIEMENS AG144 citations98
US5250375AOct 5, 1993

Photostructuring process

SIEMENS AG66 citations96
US5173393ADec 22, 1992

Etch-resistant deep ultraviolet resist process having an aromatic treating step after development

SIEMENS AG94 citations96
US5234794AAug 10, 1993

Photostructuring method

SIEMENS AG50 citations93
US6063543AMay 16, 2000

Radiation-sensitive mixture and its use

SIEMENS AG25 citations91
US5726094AMar 10, 1998

Process for producing a diffusion region adjacent to a recess in a substrate

SIEMENS AG31 citations91
US5512334AApr 30, 1996

Method for the production of a bottom resist

SIEMENS AG7 citations74
US5368901ANov 29, 1994

Method for the production of a bottom resist

SIEMENS AG7 citations74
US5703186ADec 30, 1997

Mixed polymers

SIEMENS AG5 citations73
US5384220AJan 24, 1995

Production of photolithographic structures

SIEMENS AG16 citations73
US5262283ANov 16, 1993

Method for producing a resist structure

SIEMENS AG11 citations73
US5229258AJul 20, 1993

Method for producing a resist structure

SIEMENS AG11 citations73
US6306990B1Oct 23, 2001

Film-forming polymers

SIEMENS AG8 citations72
US5171656ADec 15, 1992

Photosensitive composition

SIEMENS AG10 citations71
US5360693ANov 1, 1994

Positive o-quinone diazide photoresist containing base copolymer utilizing monomer having anhydride function and further monomer that increases etch resistance

SIEMENS AG11 citations68
US5648195AJul 15, 1997

Radiation-sensitive resist composition comprising a diazoketone

SIEMENS AG6 citations67
US5275920AJan 4, 1994

Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water

SIEMENS AG6 citations63
US5616667AApr 1, 1997

Copolymers

SIEMENS AG4 citations62
US5733706AMar 31, 1998

Dry-developable positive resist

SIEMENS AG6 citations61
US5194629AMar 16, 1993

Process for producing n-tertiary butoxycarbonyl-maleinimide

SIEMENS AG4 citations61

SIEMENS AKTINEGESELLSCHAFT

1 patent

INFINEONTECHNOLOGIES AG

1 patent

QIMONDA AG

1 patent