Inventor

GREENBERG DAVID R

US22 patents

⚠️ This page may combine multiple inventors who share the name “GREENBERG DAVID R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GREENBERG DAVID R

IBM

Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics

Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics

Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

Method of fabricating self-aligned bipolar transistor having tapered collector

Structure and method of self-aligned bipolar transistor having tapered collector

Micro-electromechanical switch having a conductive compressible electrode

Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer

Transistor structure with minimized parasitics and method of fabricating the same

Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistors

Semiconductor pin diode for high frequency applications

Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

Transistor structure with minimized parasitics and method of fabricating the same

Transistor structure with minimized parasitics and method of fabricating the same

Transistor structure with minimized parasitics and method of fabricating the same

Field effect transistor having an asymmetrically stressed channel region

Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology

DENNARD ROBERT H

Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer

Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation

INTERNAT BUSINESS MACHINES CPORPORATION

Transistor structure having an electrical contact structure with multiple metal interconnect levels staggering one another

GREENBERG DAVID R

Transistor structure having an electrical contact structure with multiple metal interconnect levels staggering one another

INFORMATION BUSINESS MACHINES

Lateral polysilicon pin diode and method for so fabricating