Inventor
ONG TONG-CHERN
TW36 patents
⚠️ This page may combine multiple inventors who share the name “ONG TONG-CHERN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS10516106B2Dec 24, 2019
Electrode structure to improve RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10249756B2Apr 2, 2019
Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10164169B2Dec 25, 2018
Memory device having a single bottom electrode layer
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9385316B2Jul 5, 2016
RRAM retention by depositing Ti capping layer before HK HfO
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US11004975B2May 11, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10686125B2Jun 16, 2020
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10482958B2Nov 19, 2019
RRAM-based monotonic counter
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10461126B2Oct 29, 2019
Memory circuit and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11329221B2May 10, 2022
Electrode structure to improve RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11183631B2Nov 23, 2021
Electrode structure to improve RRAM performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10916305B2Feb 9, 2021
RRAM-based monotonic counter
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12520731B2Jan 6, 2026
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11832529B2Nov 28, 2023
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11316096B2Apr 26, 2022
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9412721B2Aug 9, 2016
Contactless communications using ferromagnetic material
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US10879309B2Dec 29, 2020
Memory circuit and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879310B2Dec 29, 2020
Memory circuit and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10727337B2Jul 28, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
INTEL CORP
7 patentsUS5422845AJun 6, 1995
Method and device for improved programming threshold voltage distribution in electrically programmable read only memory array
INTEL CORP63 citations96
US6124168ASep 26, 2000
Method for forming an asymmetric floating gate overlap for improved device performance in buried bit-line devices
INTEL CORP32 citations92
US5289026AFeb 22, 1994
Asymmetric floating gate overlap for improved device characteristics in buried bit-line devices
INTEL CORP20 citations92
US5233562AAug 3, 1993
Methods of repairing field-effect memory cells in an electrically erasable and electrically programmable memory device
INTEL CORP45 citations92
US5548549AAug 20, 1996
Method and device for improved programming threshold voltage distribution in electrically programmable read only memory array
INTEL CORP12 citations74
US5466624ANov 14, 1995
Isolation between diffusion lines in a memory array
INTEL CORP13 citations73
US5196361AMar 23, 1993
Method of making source junction breakdown for devices with source-side erasing
INTEL CORP11 citations73
TAIWAN SEMICONDUCTOR MFG
7 patentsUS6552433B1Apr 22, 2003
Bond pads using mesh pattern via structures for protecting devices/circuits under I/O pads
TAIWAN SEMICONDUCTOR MFG27 citations93
US7388187B1Jun 17, 2008
Cross-talk reduction through deep pixel well implant for image sensors
TAIWAN SEMICONDUCTOR MFG29 citations92
US7968967B2Jun 28, 2011
One-time-programmable anti-fuse formed using damascene process
TAIWAN SEMICONDUCTOR MFG13 citations84
US7579646B2Aug 25, 2009
Flash memory with deep quantum well and high-K dielectric
TAIWAN SEMICONDUCTOR MFG17 citations84
US7420250B2Sep 2, 2008
Electrostatic discharge protection device having light doped regions
TAIWAN SEMICONDUCTOR MFG14 citations84
US7155686B2Dec 26, 2006
Placement and routing method to reduce Joule heating
TAIWAN SEMICONDUCTOR MFG10 citations68
US7199431B2Apr 3, 2007
Semiconductor devices with reduced impact from alien particles
TAIWAN SEMICONDUCTOR MFG1 citations44