P

Inventor

THEAN VOON-YEW

US57 patents
⚠️ This page may combine multiple inventors who share the name “THEAN VOON-YEW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FREESCALE SEMICONDUCTOR INC

42 patents
US7226833B2Jun 5, 2007

Semiconductor device structure and method therefor

FREESCALE SEMICONDUCTOR INC124 citations99
US7282402B2Oct 16, 2007

Method of making a dual strained channel semiconductor device

FREESCALE SEMICONDUCTOR INC69 citations97
US7018901B1Mar 28, 2006

Method for forming a semiconductor device having a strained channel and a heterojunction source/drain

FREESCALE SEMICONDUCTOR INC105 citations97
US7585735B2Sep 8, 2009

Asymmetric spacers and asymmetric source/drain extension layers

FREESCALE SEMICONDUCTOR INC33 citations93
US7575975B2Aug 18, 2009

Method for forming a planar and vertical semiconductor structure having a strained semiconductor layer

FREESCALE SEMICONDUCTOR INC34 citations93
US7323389B2Jan 29, 2008

Method of forming a FINFET structure

FREESCALE SEMICONDUCTOR INC23 citations93
US7226820B2Jun 5, 2007

Transistor fabrication using double etch/refill process

FREESCALE SEMICONDUCTOR INC34 citations93
US7037795B1May 2, 2006

Low RC product transistors in SOI semiconductor process

FREESCALE SEMICONDUCTOR INC26 citations93
US7208357B2Apr 24, 2007

Template layer formation

FREESCALE SEMICONDUCTOR INC18 citations92
US7091071B2Aug 15, 2006

Semiconductor fabrication process including recessed source/drain regions in an SOI wafer

FREESCALE SEMICONDUCTOR INC22 citations92
US7067868B2Jun 27, 2006

Double gate device having a heterojunction source/drain and strained channel

FREESCALE SEMICONDUCTOR INC39 citations92
US7029980B2Apr 18, 2006

Method of manufacturing SOI template layer

FREESCALE SEMICONDUCTOR INC25 citations92
US6979622B1Dec 27, 2005

Semiconductor transistor having structural elements of differing materials and method of formation

FREESCALE SEMICONDUCTOR INC21 citations92
US7736957B2Jun 15, 2010

Method of making a semiconductor device with embedded stressor

FREESCALE SEMICONDUCTOR INC20 citations90
US7803670B2Sep 28, 2010

Twisted dual-substrate orientation (DSO) substrates

FREESCALE SEMICONDUCTOR INC19 citations84
US7763510B1Jul 27, 2010

Method for PFET enhancement

FREESCALE SEMICONDUCTOR INC9 citations84
US7230264B2Jun 12, 2007

Semiconductor transistor having structural elements of differing materials

FREESCALE SEMICONDUCTOR INC14 citations84
US7205210B2Apr 17, 2007

Semiconductor structure having strained semiconductor and method therefor

FREESCALE SEMICONDUCTOR INC16 citations84
US7160769B2Jan 9, 2007

Channel orientation to enhance transistor performance

FREESCALE SEMICONDUCTOR INC10 citations84
US7883953B2Feb 8, 2011

Method for transistor fabrication with optimized performance

FREESCALE SEMICONDUCTOR INC7 citations83
US7282415B2Oct 16, 2007

Method for making a semiconductor device with strain enhancement

FREESCALE SEMICONDUCTOR INC17 citations82
US7821067B2Oct 26, 2010

Electronic devices including a semiconductor layer

FREESCALE SEMICONDUCTOR INC11 citations81
US7265004B2Sep 4, 2007

Electronic devices including a semiconductor layer and a process for forming the same

FREESCALE SEMICONDUCTOR INC15 citations81
US7112455B2Sep 26, 2006

Semiconductor optical devices and method for forming

FREESCALE SEMICONDUCTOR INC10 citations74
US7659156B2Feb 9, 2010

Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer

FREESCALE SEMICONDUCTOR INC5 citations72
US7235502B2Jun 26, 2007

Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors

FREESCALE SEMICONDUCTOR INC8 citations72
US7056778B2Jun 6, 2006

Semiconductor layer formation

FREESCALE SEMICONDUCTOR INC7 citations72
US8039341B2Oct 18, 2011

Selective uniaxial stress modification for use with strained silicon on insulator integrated circuit

FREESCALE SEMICONDUCTOR INC6 citations63
US8003454B2Aug 23, 2011

CMOS process with optimized PMOS and NMOS transistor devices

FREESCALE SEMICONDUCTOR INC3 citations63
US7960243B2Jun 14, 2011

Method of forming a semiconductor device featuring a gate stressor and semiconductor device

FREESCALE SEMICONDUCTOR INC4 citations63
US7781839B2Aug 24, 2010

Structure and method for strained transistor directly on insulator

FREESCALE SEMICONDUCTOR INC2 citations63
US7781277B2Aug 24, 2010

Selective uniaxial stress relaxation by layout optimization in strained silicon on insulator integrated circuit

FREESCALE SEMICONDUCTOR INC3 citations63
US7781840B2Aug 24, 2010

Semiconductor device structure

FREESCALE SEMICONDUCTOR INC4 citations63
US7737018B2Jun 15, 2010

Process of forming an electronic device including forming a gate electrode layer and forming a patterned masking layer

FREESCALE SEMICONDUCTOR INC4 citations63
US7615806B2Nov 10, 2009

Method for forming a semiconductor structure and structure thereof

FREESCALE SEMICONDUCTOR INC6 citations63
US7521720B2Apr 21, 2009

Semiconductor optical devices having fin structures

FREESCALE SEMICONDUCTOR INC4 citations63
US7494832B2Feb 24, 2009

Semiconductor optical devices and method for forming

FREESCALE SEMICONDUCTOR INC1 citations63
US7241647B2Jul 10, 2007

Graded semiconductor layer

FREESCALE SEMICONDUCTOR INC5 citations63
US7700420B2Apr 20, 2010

Integrated circuit with different channel materials for P and N channel transistors and method therefor

FREESCALE SEMICONDUCTOR INC3 citations62
US7556992B2Jul 7, 2009

Method for forming vertical structures in a semiconductor device

FREESCALE SEMICONDUCTOR INC6 citations62
US7468313B2Dec 23, 2008

Engineering strain in thick strained-SOI substrates

FREESCALE SEMICONDUCTOR INC2 citations62
US7208424B2Apr 24, 2007

Method of forming a semiconductor device having a metal layer

FREESCALE SEMICONDUCTOR INC6 citations62

IMEC VZW

2 patents

IMEC

2 patents

IBM

1 patent

WINSTEAD BRIAN A

1 patent

LI WEIPENG

1 patent

SADAKA MARIAM G

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.