Inventor
CHAE SU-HEE
KR25 patents
⚠️ This page may combine multiple inventors who share the name “CHAE SU-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
11 patentsUS8871544B2Oct 28, 2014
Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7180927B2Feb 20, 2007
Semiconductor laser diode and semiconductor laser diode assembly containing the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US7219825B2May 22, 2007
SnAgAu solder bumps, method of manufacturing the same, and method of bonding light emitting device using the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7092420B2Aug 15, 2006
Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount
SAMSUNG ELECTRONICS CO LTD3 citations63
US7276740B2Oct 2, 2007
Submount for light emitting device
SAMSUNG ELECTRONICS CO LTD4 citations62
US9246048B2Jan 26, 2016
Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8901598B2Dec 2, 2014
Light emitting device
SAMSUNG ELECTRONICS CO LTD0 citations52
US8877652B2Nov 4, 2014
Substrate structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US8003419B2Aug 23, 2011
Method of manufacturing light emitting device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7126165B2Oct 24, 2006
Light emitting device assembly
SAMSUNG ELECTRONICS CO LTD1 citations52
US8367443B2Feb 5, 2013
Method of manufacturing semiconductor light emitting device
SAMSUNG ELECTRONICS CO LTD0 citations51
KIM JUN-YOUN
4 patentsUS9337381B2May 10, 2016
Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure
KIM JUN-YOUN10 citations83
US9422638B2Aug 23, 2016
Silicon substrate including an edge portion, epitaxial structure including the same, and method of manufacturing the silicon substrate
KIM JUN-YOUN0 citations51
US8643059B2Feb 4, 2014
Substrate structure and method of manufacturing the same
KIM JUN-YOUN0 citations51
US8541771B2Sep 24, 2013
Semiconductor device and method of manufacturing the same
KIM JUN-YOUN1 citations51
SAMSUNG ELECTRO MECH
3 patentsUS6657237B2Dec 2, 2003
GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
SAMSUNG ELECTRO MECH67 citations96
US7687374B2Mar 30, 2010
Method of isolating semiconductor laser diodes
SAMSUNG ELECTRO MECH4 citations62
US7566578B2Jul 28, 2009
GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
SAMSUNG ELECTRO MECH0 citations52