Inventor · disambiguated record
Rajesh A. Rao
Also filed as: RAO RAJESH · RAO RAJESH A
39 granted patents·5 pending applications·666 citations·filing 2002–2023
98Inventor score
Files withFREESCALE SEMICONDUCTOR INC33APPLIED NOVEL DEVICES INC2MERCHANT TUSHAR P2MURALIDHAR RAMACHANDRAN2LUO TIEN YING1
Top patents by PatentIndex Score
44 records- 0197US7265059B2Multiple fin formationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 4, 2007·62 cites·17 claims
- 0295US7719039B2Phase change memory structures including pillarsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 18, 2010·36 cites·20 claims
- 0395US7183159B2Method of forming an integrated circuit having nanocluster devices and non-nanocluster devicesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Feb 27, 2007·41 cites·19 claims
- 0494US7795091B2Method of forming a split gate memory device and apparatusWINSTEAD BRIAN A·Filed 2008·Granted Sep 14, 2010·47 cites·16 claims
- 0594US7416945B1Method for forming a split gate memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 26, 2008·35 cites·20 claims
- 0693US7811886B2Split-gate thin film storage NVM cell with reduced load-up/trap-up effectsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 12, 2010·33 cites·18 claims
- 0792US6808986B2Method of forming nanocrystals in a memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Oct 26, 2004·60 cites·15 claims
- 0892US6784103B1Method of formation of nanocrystals on a semiconductor structureFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 31, 2004·60 cites·23 claims
- 0990US7517747B2Nanocrystal non-volatile memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 14, 2009·15 cites·13 claims
- 1090US7361567B2Non-volatile nanocrystal memory and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 22, 2008·16 cites·20 claims
- 1189US7932189B2Process of forming an electronic device including a layer of discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 26, 2011·16 cites·20 claims
- 1289US7241695B2Semiconductor device having nano-pillars and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 10, 2007·14 cites·19 claims
- 1389US6958265B2Semiconductor device with nanoclustersFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 25, 2005·48 cites·45 claims
- 1488US6839280B1Variable gate bias for a reference transistor in a non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jan 4, 2005·43 cites·19 claims
- 1584US7445984B2Method for removing nanoclusters from selected regionsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 4, 2008·10 cites·13 claims
- 1684US7186616B2Method of removing nanoclusters in a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 6, 2007·9 cites·14 claims
- 1783US7432158B1Method for retaining nanocluster size and electrical characteristics during processingFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 7, 2008·11 cites·19 claims
- 1883US7091130B1Method of forming a nanocluster charge storage deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 15, 2006·32 cites·22 claims
- 1979US7800164B2Nanocrystal non-volatile memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Sep 21, 2010·6 cites·7 claims
- 2079US7767588B2Method for forming a deposited oxide layerFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Aug 3, 2010·6 cites·9 claims
- 2176US7811851B2Phase change memory structuresFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 12, 2010·6 cites·11 claims
- 2276US7704830B2Split gate memory cell using sidewall spacersFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 27, 2010·8 cites·19 claims
- 2375US7557008B2Method of making a non-volatile memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jul 7, 2009·7 cites·12 claims
- 2473US8097873B2Phase change memory structuresMURALIDHAR RAMACHANDRAN·Filed 2010·Granted Jan 17, 2012·3 cites·20 claims
- 2573US6969883B2Non-volatile memory having a reference transistorFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 29, 2005·15 cites·17 claims
- 2669US7479429B2Split game memory cell methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 20, 2009·4 cites·20 claims
- 2765US11915983B2Structures and methods of fabricating electronic devices using separation and charge depletion techniquesAPPLIED NOVEL DEVICES INC·Filed 2023·Granted Feb 27, 2024·0 cites·11 claims
- 2865US8803217B2Process of forming an electronic device including a control gate electrode, a semiconductor layer, and a select gate electrodeRAO RAJESH A·Filed 2007·Granted Aug 12, 2014·4 cites·20 claims
- 2965US8563355B2Method of making a phase change memory cell having a silicide heater in conjunction with a FinFETMATHEW LEO·Filed 2008·Granted Oct 22, 2013·3 cites·10 claims
- 3063US7820491B2Light erasable memory and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 26, 2010·2 cites·16 claims
- 3162US7816211B2Method of making a semiconductor device having high voltage transistors, non-volatile memory transistors, and logic transistorsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 19, 2010·2 cites·5 claims
- 3261US7642163B2Process of forming an electronic device including discontinuous storage elements within a dielectric layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 5, 2010·2 cites·20 claims
- 3358US7579238B2Method of forming a multi-bit nonvolatile memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 25, 2009·1 cites·20 claims
- 3456US8080439B2Method of making a vertical phase change memory (PCM) and a PCM deviceMARTINEZ JR ARTURO M·Filed 2008·Granted Dec 20, 2011·3 cites·13 claims
- 3556US6955967B2Non-volatile memory having a reference transistor and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 18, 2005·6 cites·11 claims
- 3655US11610819B2Structures and methods of fabricating electronic devices using separation and charge depletion techniquesAPPLIED NOVEL DEVICES INC·Filed 2020·Granted Mar 21, 2023·0 cites·9 claims
- 3743US7563662B2Processes for forming electronic devices including non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 21, 2009·0 cites·20 claims
- 3840US7528047B2Self-aligned split gate memory cell and method of formingFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 5, 2009·0 cites·16 claims
- 3938US2006199335A1Electronic devices including non-volatile memory structures and processes for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 4037US7160775B2Method of discharging a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 9, 2007·0 cites·11 claims
- 4137US2007202645A1Method for forming a deposited oxide layerLUO TIEN YING·Filed 2007·Application pending·0 cites
- 4235US2008121967A1Nanocrystal non-volatile memory cell and method thereforMURALIDHAR RAMACHANDRAN·Filed 2006·Application pending·0 cites
- 4332US2009061608A1Method of forming a semiconductor device having a silicon dioxide layerMERCHANT TUSHAR P·Filed 2007·Application pending·0 cites
- 4430US2006189079A1Method of forming nanoclustersMERCHANT TUSHAR P·Filed 2005·Application pending·0 cites
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