Inventor
CHANG YAO-WEN
TW175 patents
⚠️ This page may combine multiple inventors who share the name “CHANG YAO-WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
30 patentsUS10290701B1May 14, 2019
MIM capacitor, semiconductor structure including MIM capacitors and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US10163651B1Dec 25, 2018
Structure and method to expose memory cells with different sizes
TAIWAN SEMICONDUCTOR MFG CO LTD32 citations94
US9954166B1Apr 24, 2018
Embedded memory device with a composite top electrode
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US9711713B1Jul 18, 2017
Semiconductor structure, electrode structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US10276779B2Apr 30, 2019
Top electrode cap structure for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10043705B2Aug 7, 2018
Memory device and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9825117B2Nov 21, 2017
MIM/RRAM structure with improved capacitance and reduced leakage current
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9761799B2Sep 12, 2017
Bottom electrode structure for improved electric field uniformity
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9502649B2Nov 22, 2016
Bottom electrode structure for improved electric field uniformity
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9257642B1Feb 9, 2016
Protective sidewall techniques for RRAM
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations84
US10275559B2Apr 30, 2019
Method for legalizing mixed-cell height standard cells of IC
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations82
US11818962B2Nov 14, 2023
Sidewall spacer structure for memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11721794B2Aug 8, 2023
Method for manufacturing reflective structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11581484B2Feb 14, 2023
Semiconductor structure, electrode structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11527713B2Dec 13, 2022
Top electrode via with low contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11257997B2Feb 22, 2022
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11183394B2Nov 23, 2021
Structure and method to expose memory cells with different sizes
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11121308B2Sep 14, 2021
Sidewall spacer structure for memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11088239B2Aug 10, 2021
Cap structure for trench capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11024774B2Jun 1, 2021
Display device reflector having improved reflectivity
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658318B2May 19, 2020
Film scheme for bumping
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10497773B2Dec 3, 2019
Method to improve MIM device performance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10468587B2Nov 5, 2019
Semiconductor structure, electrode structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9887134B2Feb 6, 2018
Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9722011B2Aug 1, 2017
Film scheme for MIM device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9543375B2Jan 10, 2017
MIM/RRAM structure with improved capacitance and reduced leakage current
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9450183B2Sep 20, 2016
Memory structure having top electrode with protrusion
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9257497B2Feb 9, 2016
Metal-insulator-metal (MIM) capacitor techniques
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9633920B2Apr 25, 2017
Low damage passivation layer for III-V based devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12484232B2Nov 25, 2025
Ferroelectric memory device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
MACRONIX INT CO LTD
10 patentsUS6486028B1Nov 26, 2002
Method of fabricating a nitride read-only-memory cell vertical structure
MACRONIX INT CO LTD190 citations99
US6320786B1Nov 20, 2001
Method of controlling multi-state NROM
MACRONIX INT CO LTD431 citations99
US6465849B1Oct 15, 2002
CMOS structure having dynamic threshold voltage
MACRONIX INT CO LTD44 citations93
US6549029B1Apr 15, 2003
Circuit and method for measuring capacitance
MACRONIX INT CO LTD21 citations91
US10741262B2Aug 11, 2020
NAND flash operating techniques mitigating program disturbance
MACRONIX INT CO LTD11 citations85
US10879266B1Dec 29, 2020
Semiconductor device and operating method thereof
MACRONIX INT CO LTD4 citations73
US10763273B2Sep 1, 2020
Vertical GAA flash memory including two-transistor memory cells
MACRONIX INT CO LTD4 citations73
US8929134B2Jan 6, 2015
Method of programming a flash memory by enhancing the channel voltage of a program-inhibit bit line with a boosted inhibit scheme
MACRONIX INT CO LTD5 citations71
US9858995B1Jan 2, 2018
Method for operating a memory device
MACRONIX INT CO LTD4 citations70
US9466375B1Oct 11, 2016
Memory device and programming method thereof
MACRONIX INT CO LTD5 citations69
UMAX DATA SYSTEMS INC
3 patentsCHANG HSING-WEN
1 patentSPRINGSOFT USA INC
1 patentCHEN TUNG-CHIEH
1 patentChang hua-yu
1 patentBALABANOV VALERIY
1 patentMACRONIX INTERNATIONAL LTD
1 patentANAGLOBE TECH INC
1 patentShowing the top 50 of 175 patents by PatentIndex Score.