Inventor
MAGRI ANGELO
IT48 patents
⚠️ This page may combine multiple inventors who share the name “MAGRI ANGELO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
26 patentsUS6404010B2Jun 11, 2002
MOS technology power device
ST MICROELECTRONICS SRL36 citations92
US6040609AMar 21, 2000
Process for integrating, in a single semiconductor chip, MOS technology devices with different threshold voltages
ST MICROELECTRONICS SRL26 citations90
US8921211B2Dec 30, 2014
Vertical-conduction integrated electronic device and method for manufacturing thereof
ST MICROELECTRONICS SRL5 citations84
US7875936B2Jan 25, 2011
Power MOS electronic device and corresponding realizing method
ST MICROELECTRONICS SRL6 citations74
US6492691B2Dec 10, 2002
High integration density MOS technology power device structure
ST MICROELECTRONICS SRL13 citations74
US7067363B2Jun 27, 2006
Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density
ST MICROELECTRONICS SRL7 citations73
US11798981B2Oct 24, 2023
4H—SiC electronic device with improved short-circuit performances, and manufacturing method thereof
ST MICROELECTRONICS SRL2 citations72
US7569883B2Aug 4, 2009
Switching-controlled power MOS electronic device
ST MICROELECTRONICS SRL7 citations72
US7205607B2Apr 17, 2007
Semiconductor power device with insulated gate and trench-gate structure and corresponding manufacturing method
ST MICROELECTRONICS SRL9 citations68
US8895370B2Nov 25, 2014
Vertical conduction power electronic device and corresponding realization method
ST MICROELECTRONICS SRL2 citations63
US7713853B2May 11, 2010
Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devices
ST MICROELECTRONICS SRL4 citations63
US7560368B2Jul 14, 2009
Insulated gate planar integrated power device with co-integrated Schottky diode and process
ST MICROELECTRONICS SRL6 citations63
US12342582B2Jun 24, 2025
4H-SiC electronic device with improved short-circuit performances, and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations62
US7304335B2Dec 4, 2007
Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance and high scaling down density
ST MICROELECTRONICS SRL2 citations62
US7372142B2May 13, 2008
Vertical conduction power electronic device package and corresponding assembling method
ST MICROELECTRONICS SRL5 citations61
US11728422B2Aug 15, 2023
Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof
ST MICROELECTRONICS SRL1 citations60
US7842574B2Nov 30, 2010
Method of manufacturing a semiconductor power device
ST MICROELECTRONICS SRL5 citations57
US9142646B2Sep 22, 2015
Integrated electronic device with edge-termination structure and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations52
US7126173B2Oct 24, 2006
Method for enhancing the electric connection between a power electronic device and its package
ST MICROELECTRONICS SRL0 citations51
US9627472B2Apr 18, 2017
Semiconductor structure with varying doping profile and related ICS and devices
ST MICROELECTRONICS SRL1 citations50
US9520468B2Dec 13, 2016
Integrated power device on a semiconductor substrate having an improved trench gate structure
ST MICROELECTRONICS SRL0 citations49
US9647061B2May 9, 2017
Electronic device of vertical MOS type with termination trenches having variable depth
ST MICROELECTRONICS SRL0 citations48
US7968412B2Jun 28, 2011
Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufacture
ST MICROELECTRONICS SRL1 citations46
US8030192B2Oct 4, 2011
Process for manufacturing a large-scale integration MOS device and corresponding MOS device
ST MICROELECTRONICS SRL0 citations45
US7091558B2Aug 15, 2006
MOS power device with high integration density and manufacturing process thereof
ST MICROELECTRONICS SRL0 citations40
US9070694B2Jun 30, 2015
Manufacturing of electronic devices in a wafer of semiconductor material having trenches with different directions
ST MICROELECTRONICS SRL0 citations37
SGS THOMSON MICROELECTRONICS
11 patentsUS5981343ANov 9, 1999
Single feature size mos technology power device
SGS THOMSON MICROELECTRONICS43 citations96
US6222232B1Apr 24, 2001
Asymmetric MOS technology power device
SGS THOMSON MICROELECTRONICS18 citations93
US6054737AApr 25, 2000
High density MOS technology power device
SGS THOMSON MICROELECTRONICS16 citations93
US5981998ANov 9, 1999
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS18 citations93
US6566690B2May 20, 2003
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS6 citations74
US6468866B2Oct 22, 2002
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS7 citations74
US6326271B2Dec 4, 2001
Asymmetric MOS technology power device
SGS THOMSON MICROELECTRONICS14 citations74
US6064087AMay 16, 2000
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS5 citations74
US6030870AFeb 29, 2000
High density MOS technology power device
SGS THOMSON MICROELECTRONICS5 citations74
US5985721ANov 16, 1999
Single feature size MOS technology power device
SGS THOMSON MICROELECTRONICS10 citations74
US6548864B2Apr 15, 2003
High density MOS technology power device
SGS THOMSON MICROELECTRONICS3 citations63
MAGRI ANGELO
7 patentsUS8637369B2Jan 28, 2014
Method for manufacturing an integrated power device having gate structures within trenches
MAGRI ANGELO5 citations80
US8664713B2Mar 4, 2014
Integrated power device on a semiconductor substrate having an improved trench gate structure
MAGRI ANGELO4 citations69
US8482085B2Jul 9, 2013
Power MOS electronic device and corresponding realizing method
MAGRI ANGELO0 citations51
US8420487B2Apr 16, 2013
Power MOS electronic device and corresponding realizing method
MAGRI ANGELO0 citations51
US8420525B2Apr 16, 2013
Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof
MAGRI ANGELO0 citations46
US8405144B2Mar 26, 2013
Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof
MAGRI ANGELO0 citations46
US8101991B2Jan 24, 2012
Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof
MAGRI ANGELO0 citations46
FRISINA FERRUCCIO
3 patentsUS8653590B2Feb 18, 2014
Vertical-conduction integrated electronic device and method for manufacturing thereof
FRISINA FERRUCCIO7 citations83
US9018635B2Apr 28, 2015
Integrated electronic device with edge-termination structure and manufacturing method thereof
FRISINA FERRUCCIO2 citations61
US8624332B2Jan 7, 2014
Vertical conduction power electronic device and corresponding realization method
FRISINA FERRUCCIO0 citations51