Inventor
YOUN JONG-MIL
KR28 patents
⚠️ This page may combine multiple inventors who share the name “YOUN JONG-MIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
25 patentsUS9698264B2Jul 4, 2017
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations92
US9515182B2Dec 6, 2016
High-integration semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations92
US9502417B2Nov 22, 2016
Semiconductor device having a substrate including a first active region and a second active region
SAMSUNG ELECTRONICS CO LTD8 citations92
US9461173B2Oct 4, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations92
US9240411B1Jan 19, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations92
US9048219B2Jun 2, 2015
High integration semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US6147385ANov 14, 2000
CMOS static random access memory devices
SAMSUNG ELECTRONICS CO LTD27 citations92
US10084088B2Sep 25, 2018
Method for fabricating a semiconductor device having a first fin active pattern and a second fin active pattern
SAMSUNG ELECTRONICS CO LTD7 citations84
US9478551B2Oct 25, 2016
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9209184B2Dec 8, 2015
High-integration semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US7112831B2Sep 26, 2006
Ternary content addressable memory cell
SAMSUNG ELECTRONICS CO LTD12 citations83
US10032886B2Jul 24, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations82
US5814538ASep 29, 1998
Methods of forming BiCMOS devices having dual-layer emitter electrodes and thin-film transistors therein
SAMSUNG ELECTRONICS CO LTD12 citations73
US11575014B2Feb 7, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11011511B2May 18, 2021
Electrostatic discharge protection devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US4950616AAug 21, 1990
Method for fabricating a BiCMOS device
SAMSUNG ELECTRONICS CO LTD8 citations72
US6165900ADec 26, 2000
Method for manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations63
US11581435B2Feb 14, 2023
Semiconductor device including a first fin active region, a second fin active region and a field region
SAMSUNG ELECTRONICS CO LTD0 citations62
US12074157B2Aug 27, 2024
Electrostatic discharge protection devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US5173760ADec 22, 1992
BiCMOS semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations60
US4912055AMar 27, 1990
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations60
US4970174ANov 13, 1990
Method for making a BiCMOS semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations58
US10714614B2Jul 14, 2020
Semiconductor device including a first fin active region and a second fin active region
SAMSUNG ELECTRONICS CO LTD0 citations52
US9099336B2Aug 4, 2015
Semiconductor device and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations49
US9048236B2Jun 2, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations45