P

Inventor

CUI YING

CN80 patents
⚠️ This page may combine multiple inventors who share the name “CUI YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

24 patents
US11024371B2Jun 1, 2021

Method of programming memory device and related memory device

YANGTZE MEMORY TECH CO LTD15 citations94
US11501822B2Nov 15, 2022

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD5 citations84
US11081164B2Aug 3, 2021

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD5 citations84
US10957408B1Mar 23, 2021

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD6 citations84
US10991438B1Apr 27, 2021

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

YANGTZE MEMORY TECH CO LTD7 citations82
US11862230B2Jan 2, 2024

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD2 citations73
US11222674B2Jan 11, 2022

Method of sequentially biasing bias lines in memory device for program disturbance reduction and memory device utilizing same

YANGTZE MEMORY TECH CO LTD5 citations73
US10885990B1Jan 5, 2021

Method of performing programming operation and related memory device

YANGTZE MEMORY TECH CO LTD3 citations72
US12512145B2Dec 30, 2025

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD0 citations62
US12412609B2Sep 9, 2025

Method of reducing program disturbance in memory device and memory device utilizing same

YANGTZE MEMORY TECH CO LTD0 citations62
US12237025B2Feb 25, 2025

Memory device, memory system, and program operation method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US12176033B2Dec 24, 2024

Memory device, operating method thereof, system, and storage medium

YANGTZE MEMORY TECH CO LTD0 citations62
US12159665B2Dec 3, 2024

Method of programming memory device and related memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US11875862B2Jan 16, 2024

Memory including a plurality of portions and used for reducing program disturbance and program method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11705190B2Jul 18, 2023

Method of programming memory device and related memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US11676646B2Jun 13, 2023

Method of reducing program disturbance in memory device and memory device utilizing same

YANGTZE MEMORY TECH CO LTD0 citations62
US11594288B2Feb 28, 2023

Memory including a plurality of portions and used for reducing program disturbance and program method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11568941B2Jan 31, 2023

Memory including a plurality of portions and used for reducing program disturbance and program method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11205494B2Dec 21, 2021

Non-volatile memory device and control method

YANGTZE MEMORY TECH CO LTD0 citations62
US11195590B2Dec 7, 2021

Memory including a plurality of portions and used for reducing program disturbance and program method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US12499949B2Dec 16, 2025

Memory devices and operating methods thereof, memory systems

YANGTZE MEMORY TECH CO LTD0 citations61
US11848058B2Dec 19, 2023

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

YANGTZE MEMORY TECH CO LTD0 citations61
US11626170B2Apr 11, 2023

Method and memory used for reducing program disturbance by adjusting voltage of dummy word line

YANGTZE MEMORY TECH CO LTD0 citations61
US12537067B2Jan 27, 2026

Method of operating memory, memory, and memory system

YANGTZE MEMORY TECH CO LTD0 citations59

INTEL CORP

9 patents

BOE TECHNOLOGY GROUP CO LTD

8 patents

UNIV NORTHEASTERN

2 patents

CIRRUS LOGIC INC

1 patent

CUI YING

1 patent

SOKEN KAGAKU KK

1 patent

FUTUREWEI TECHNOLOGIES INC

1 patent

LIN ALLEN M

1 patent

UNIV ZHEJIANG

1 patent

ZTE CORP

1 patent

Showing the top 50 of 80 patents by PatentIndex Score.