Inventor
CHA SEON YONG
KR15 patents
⚠️ This page may combine multiple inventors who share the name “CHA SEON YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYNIX SEMICONDUCTOR INC
8 patentsUS6649953B2Nov 18, 2003
Magnetic random access memory having a transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell
HYNIX SEMICONDUCTOR INC38 citations91
US6855564B2Feb 15, 2005
Magnetic random access memory having transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell
HYNIX SEMICONDUCTOR INC14 citations83
US6885578B2Apr 26, 2005
NAND-type magnetoresistive RAM
HYNIX SEMICONDUCTOR INC11 citations72
US8053817B2Nov 8, 2011
Vertical transistor and method for forming the same
HYNIX SEMICONDUCTOR INC2 citations61
US7095069B2Aug 22, 2006
Magnetoresistive random access memory, and manufacturing method thereof
HYNIX SEMICONDUCTOR INC6 citations61
US7019370B2Mar 28, 2006
Method for manufacturing magnetic random access memory
HYNIX SEMICONDUCTOR INC3 citations61
US6503795B2Jan 7, 2003
Method for fabricating a semiconductor device having a storage cell
HYNIX SEMICONDUCTOR INC4 citations61
US7799641B2Sep 21, 2010
Method for forming a semiconductor device having recess channel
HYNIX SEMICONDUCTOR INC4 citations59
SK HYNIX INC
6 patentsUS11501827B2Nov 15, 2022
Vertical memory device with a double word line structure
SK HYNIX INC5 citations83
US11887654B2Jan 30, 2024
Vertical memory device
SK HYNIX INC1 citations72
US11355177B2Jun 7, 2022
Vertical memory device
SK HYNIX INC2 citations72
US12230313B2Feb 18, 2025
Vertical memory device
SK HYNIX INC0 citations62
US12131774B2Oct 29, 2024
Vertical memory device with a double word line structure
SK HYNIX INC0 citations62
US11832434B2Nov 28, 2023
Memory cell and memory device
SK HYNIX INC0 citations48