Inventor · disambiguated record

Agnès Trassoudaine

Also filed as: TRASSOUDAINE AGNES

1 granted patent·54 citations·filing 2001–2001

50Inventor score

Technology areasC30B

Files withCENTRE NAT RECH SCIENT1

Top patents by PatentIndex Score

1 record

0186US6632725B2Process for producing an epitaxial layer of gallium nitride by the HVPE methodCENTRE NAT RECH SCIENT·Filed 2001·Granted Oct 14, 2003·54 cites·22 claims

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