Inventor
PREVITALI BERNARD
FR16 patents
⚠️ This page may combine multiple inventors who share the name “PREVITALI BERNARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
12 patentsUS11152360B2Oct 19, 2021
Architecture of N and P transistors superposed with canal structure formed of nanowires
COMMISSARIAT ENERGIE ATOMIQUE3 citations72
US9761583B2Sep 12, 2017
Manufacturing of self aligned interconnection elements for 3D integrated circuits
COMMISSARIAT ENERGIE ATOMIQUE2 citations71
US12237330B2Feb 25, 2025
Architecture with stacked N and P transistors with a channel structure formed of nanowires
COMMISSARIAT ENERGIE ATOMIQUE0 citations62
US8021986B2Sep 20, 2011
Method for producing a transistor with metallic source and drain
COMMISSARIAT ENERGIE ATOMIQUE2 citations62
US7491644B2Feb 17, 2009
Manufacturing process for a transistor made of thin layers
COMMISSARIAT ENERGIE ATOMIQUE2 citations59
US7709332B2May 4, 2010
Process for fabricating a field-effect transistor with self-aligned gates
COMMISSARIAT ENERGIE ATOMIQUE2 citations57
US7473588B2Jan 6, 2009
Method for insulating patterns formed in a thin film of oxidizable semi-conducting material
COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US9721850B2Aug 1, 2017
Method for making a three dimensional integrated electronic circuit
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US8021934B2Sep 20, 2011
Method for making a transistor with metallic source and drain
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10128332B2Nov 13, 2018
Method for fabricating an improved field effect device
COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US7977195B2Jul 12, 2011
Method for manufacturing a field effect transistor with auto-aligned grids
COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US7425509B2Sep 16, 2008
Method for forming patterns aligned on either side of a thin film
COMMISSARIAT ENERGIE ATOMIQUE0 citations36