Inventor
TSAI CHERNG-SHIAW
TW26 patents
Patents
26 patentsUS11664237B2May 30, 2023
Semiconductor device having improved overlay shift tolerance
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12132000B2Oct 29, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11854963B2Dec 26, 2023
Semiconductor interconnection structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12543556B2Feb 3, 2026
Semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12463134B2Nov 4, 2025
Semiconductor interconnection structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12431386B2Sep 30, 2025
Semiconductor device having metallization layer with low capacitance and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12412831B2Sep 9, 2025
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272597B2Apr 8, 2025
Semiconductor interconnection structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12165945B2Dec 10, 2024
Thermal interconnect structure for thermal management of electrical interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094764B2Sep 17, 2024
Interconnect structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074060B2Aug 27, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074084B2Aug 27, 2024
Heat dispersion layers for double sided interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12062572B2Aug 13, 2024
Semiconductor device having metallization layer with low capacitance and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11658092B2May 23, 2023
Thermal interconnect structure for thermal management of electrical interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11640928B2May 2, 2023
Heat dispersion layers for double sided interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12484310B2Nov 25, 2025
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12211700B2Jan 28, 2025
Selective removal of an etching stop layer for improving overlay shift tolerance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12205946B2Jan 21, 2025
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11923357B2Mar 5, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10998225B2May 4, 2021
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12412804B2Sep 9, 2025
Semiconductor structure with improved heat dissipation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12538773B2Jan 27, 2026
Semiconductor structure having self-aligned conductive structure and method for forming the semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12249555B2Mar 11, 2025
Semiconductor device package including a thermal conductive layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9627215B1Apr 18, 2017
Structure and method for interconnection
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US12482703B2Nov 25, 2025
Semiconductor device having thermally conductive air gap structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10867805B2Dec 15, 2020
Selective removal of an etching stop layer for improving overlay shift tolerance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50