Inventor

HUANG HSIN-YEN

TW95 patents

⚠️ This page may combine multiple inventors who share the name “HUANG HSIN-YEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUANG HSIN-YEN

TAIWAN SEMICONDUCTOR MFG CO LTD

Interconnect structure

Selective deposition of barrier layer

Interconnect structure and method for forming the same

Semiconductor device comprising etch stop layer over dielectric layer and method of manufacture

Semiconductor device and manufacturing method thereof

Self-aligned interconnection structure and method

Semiconductor structure and method making the same

Method of forming semiconductor device comprising conductive feature, dielectric layer adjacent conductive feature, and etch stop layer on top surface of dielectric layer

Semiconductor device comprising cap layer over dielectric layer and method of manufacture

Dielectric capping structure overlying a conductive structure to increase stability

Semiconductor device structure with interconnect structure having air gap

Dielectric capping structure overlying a conductive structure to increase stability

Interconnect strucutre with protective etch-stop

Capping layer overlying dielectric structure to increase reliability

Dielectric capping structure overlying a conductive structure to increase stability

Metal capping layer and methods thereof

Methods for fabricating a low-resistance interconnect

Selective deposition method for forming semiconductor structure

Interconnect structures comprising flexible buffer layers

Semiconductor device structure and methods of forming the same

Semiconductor interconnection structure and methods of forming the same

Protection liner on interconnect wire to enlarge processing window for overlying interconnect via

Interconnect structure with protective etch-stop

Selective deposition for integrated circuit interconnect structures

Interconnect structure and method for forming the same

Self-align via structure by selective deposition

Interconnect structures including air gaps

Method of providing a workpiece including low resistance interconnect low-resistance interconnect

Semiconductor device structure having air gap and methods of forming the same

Using a self-assembly layer to facilitate selective formation of an etching stop layer

Interconnect structure

Interconnect structure

Selective deposition of barrier layer

Selective deposition for integrated circuit interconnect structures

Interconnect strucutre with protective etch-stop

Metal capping layer and methods thereof

Semiconductor structure including low-resistance interconnect and integrated circuit device having the same

Self-aligned via structure by selective deposition

Metal capping layer and methods thereof

Method for manufacturing interconnect structures including air gaps

Selective deposition for integrated circuit interconnect structures

Interconnect structure and method for forming the same

Using a self-assembly layer to facilitate selective formation of an etching stop layer

Semiconductor structure and method making the same

Semiconductor device structure with interconnect structure having air gap

Protection liner on interconnect wire to enlarge processing window for overlying interconnect via

Semiconductor interconnection structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG

Interconnect structures comprising flexible buffer layers

Semiconductor device metallization systems and methods

Semiconductor integrated circuit and fabricating the same