P

Inventor

KADOW CHRISTOPH

DE38 patents
⚠️ This page may combine multiple inventors who share the name “KADOW CHRISTOPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

20 patents
US12068123B2Aug 20, 2024

Switch device, method for operating switch device and method for manufacturing switch device

INFINEON TECHNOLOGIES AG3 citations74
US7492212B1Feb 17, 2009

Adaptive capacitance for transistor

INFINEON TECHNOLOGIES AG7 citations72
US9029941B2May 12, 2015

Vertical transistor component

INFINEON TECHNOLOGIES AG2 citations63
US12274076B2Apr 8, 2025

Integrated circuit, method for manufacturing an integrated circuit, wafer and method for manufacturing a wafer

INFINEON TECHNOLOGIES AG0 citations62
US12212313B2Jan 28, 2025

Phase change switch device having a set of heaters arranged to heat a phase change material and method of operating the phase change switch device

INFINEON TECHNOLOGIES AG0 citations62
US11863168B2Jan 2, 2024

Phase change switch device and method of operating a phase change switch device

INFINEON TECHNOLOGIES AG0 citations62
US11818900B2Nov 14, 2023

Integrated circuit, method for manufacturing an integrated circuit, wafer and method for manufacturing a wafer

INFINEON TECHNOLOGIES AG0 citations62
US10615029B2Apr 7, 2020

Device and method for manufacturing the device

INFINEON TECHNOLOGIES AG1 citations62
US12156488B2Nov 26, 2024

Phase change switch with multi face heater configuration

INFINEON TECHNOLOGIES AG0 citations61
US11963466B2Apr 16, 2024

Switch device and method for manufacturing a switch device

INFINEON TECHNOLOGIES AG0 citations61
US11730068B2Aug 15, 2023

Phase change switch with self-aligned heater and RF terminals

INFINEON TECHNOLOGIES AG0 citations61
US11563174B2Jan 24, 2023

Phase change switch with multi face heater configuration

INFINEON TECHNOLOGIES AG0 citations61
US9450019B2Sep 20, 2016

Power semiconductor device, manufacturing method therefor, and method for operating the power semiconductor device

INFINEON TECHNOLOGIES AG2 citations61
US7868643B2Jan 11, 2011

Proportional regulation for optimized current sensor performance

INFINEON TECHNOLOGIES AG2 citations61
US9299829B2Mar 29, 2016

Vertical transistor component

INFINEON TECHNOLOGIES AG0 citations52
US8853786B1Oct 7, 2014

Semiconductor device with switching and rectifier cells

INFINEON TECHNOLOGIES AG1 citations52
US9865792B2Jan 9, 2018

System and method for manufacturing a temperature difference sensor

INFINEON TECHNOLOGIES AG0 citations51
US9761665B2Sep 12, 2017

Method of manufacturing an integrated circuit having field effect transistors including a peak in a body dopant concentration

INFINEON TECHNOLOGIES AG0 citations51
US9355909B2May 31, 2016

Method of manufacturing an integrated circuit having field effect transistors including a peak in a body dopant concentration

INFINEON TECHNOLOGIES AG0 citations51
US9614033B2Apr 4, 2017

Semiconductor device including an isolation structure and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AG0 citations42

KADOW CHRISTOPH

5 patents

DIBRA DONALD

3 patents

INFINEON TECH DRESDEN GMBH & CO KG

3 patents

INFINEON TECHNOLOGIES AUSTRIA

2 patents

MEYER THORSTEN

2 patents

INFINEON TECHNOLOGIES AUSTRIA AG

2 patents

MEISER ANDREAS PETER

1 patent