Inventor

KRISCHKE NORBERT

DE25 patents

⚠️ This page may combine multiple inventors who share the name “KRISCHKE NORBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KRISCHKE NORBERT

INFINEON TECHNOLOGIES AG

Semiconductor device with temperature sensor

Semiconductor component arrangement comprising a trench transistor

Method of producing a semiconductor component arrangement comprising a trench transistor

Semiconductor switch with integrated temperature sensor

Integrated circuit configuration having a structure for reducing a minority charge carrier current

Field effect power transistor

Semiconductor arrangement with an integrated temperature sensor

Semiconductor component arrangement comprising a trench transistor

Trench connection between a transistor and a further component

Method of manufacturing an integrated circuit having field effect transistors including a peak in a body dopant concentration

Method of manufacturing an integrated circuit having field effect transistors including a peak in a body dopant concentration

Minority carrier conversion structure

ZUNDEL MARKUS

Method for producing a semiconductor component arrangement comprising a trench transistor

Field effect trench transistor having active trenches

Semiconductor component arrangement comprising a trench transistor

Semiconductor having optimized insulation structure and process for producing the semiconductor

Semiconductor component arrangement and method for producing thereof

KADOW CHRISTOPH

High voltage bipolar transistor with trench field plate

High-voltage bipolar transistor with trench field plate

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor having optimized insulation structure and process for producing the semiconductor

Trench transistor

SIEMENS AG

Field effect-controllable power semiconductor component with temperature sensor

KRISCHKE NORBERT

Transistor

MEYER THORSTEN

Integrated circuit having field effect transistors and manufacturing method

INFINEON TECHNOLOGIES AUSTRIA AG

Integrated transistor structure having a power transistor and a bipolar transistor