P

Inventor

SHUE SHAU-LIN

TW379 patents
⚠️ This page may combine multiple inventors who share the name “SHUE SHAU-LIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

41 patents
US9153478B2Oct 6, 2015

Spacer etching process for integrated circuit design

TAIWAN SEMICONDUCTOR MFG118 citations99
US7235482B2Jun 26, 2007

Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology

TAIWAN SEMICONDUCTOR MFG532 citations99
US6342448B1Jan 29, 2002

Method of fabricating barrier adhesion to low-k dielectric layers in a copper damascene process

TAIWAN SEMICONDUCTOR MFG197 citations99
US6271136B1Aug 7, 2001

Multi-step plasma process for forming TiSiN barrier

TAIWAN SEMICONDUCTOR MFG128 citations98
US6197701B1Mar 6, 2001

Lightly nitridation surface for preparing thin-gate oxides

TAIWAN SEMICONDUCTOR MFG90 citations98
US6177347B1Jan 23, 2001

In-situ cleaning process for Cu metallization

TAIWAN SEMICONDUCTOR MFG88 citations98
US6133144AOct 17, 2000

Self aligned dual damascene process and structure with low parasitic capacitance

TAIWAN SEMICONDUCTOR MFG91 citations98
US6224737B1May 1, 2001

Method for improvement of gap filling capability of electrochemical deposition of copper

TAIWAN SEMICONDUCTOR MFG112 citations97
US6878615B2Apr 12, 2005

Method to solve via poisoning for porous low-k dielectric

TAIWAN SEMICONDUCTOR MFG49 citations96
US6806192B2Oct 19, 2004

Method of barrier-less integration with copper alloy

TAIWAN SEMICONDUCTOR MFG45 citations96
US6500749B1Dec 31, 2002

Method to improve copper via electromigration (EM) resistance

TAIWAN SEMICONDUCTOR MFG57 citations96
US6436825B1Aug 20, 2002

Method of copper barrier layer formation

TAIWAN SEMICONDUCTOR MFG65 citations96
US6380056B1Apr 30, 2002

Lightly nitridation surface for preparing thin-gate oxides

TAIWAN SEMICONDUCTOR MFG75 citations96
US6281127B1Aug 28, 2001

Self-passivation procedure for a copper damascene structure

TAIWAN SEMICONDUCTOR MFG67 citations96
US6083835AJul 4, 2000

Self-passivation of copper damascene

TAIWAN SEMICONDUCTOR MFG58 citations96
US5744395AApr 28, 1998

Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure

TAIWAN SEMICONDUCTOR MFG79 citations96
US7883991B1Feb 8, 2011

Temporary carrier bonding and detaching processes

TAIWAN SEMICONDUCTOR MFG123 citations95
US6140241AOct 31, 2000

Multi-step electrochemical copper deposition process with improved filling capability

TAIWAN SEMICONDUCTOR MFG72 citations95
US9177797B2Nov 3, 2015

Lithography using high selectivity spacers for pitch reduction

TAIWAN SEMICONDUCTOR MFG28 citations94
US9123776B2Sep 1, 2015

Self-aligned double spacer patterning process

TAIWAN SEMICONDUCTOR MFG26 citations93
US7700479B2Apr 20, 2010

Cleaning processes in the formation of integrated circuit interconnect structures

TAIWAN SEMICONDUCTOR MFG33 citations93
US7396767B2Jul 8, 2008

Semiconductor structure including silicide regions and method of making same

TAIWAN SEMICONDUCTOR MFG33 citations93
US7193327B2Mar 20, 2007

Barrier structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG43 citations93
US7015126B2Mar 21, 2006

Method of forming silicided gate structure

TAIWAN SEMICONDUCTOR MFG28 citations93
US6967155B2Nov 22, 2005

Adhesion of copper and etch stop layer for copper alloy

TAIWAN SEMICONDUCTOR MFG16 citations93
US6815336B1Nov 9, 2004

Planarization of copper damascene using reverse current electroplating and chemical mechanical polishing

TAIWAN SEMICONDUCTOR MFG20 citations93
US6736701B1May 18, 2004

Eliminate broken line damage of copper after CMP

TAIWAN SEMICONDUCTOR MFG29 citations93
US6716753B1Apr 6, 2004

Method for forming a self-passivated copper interconnect structure

TAIWAN SEMICONDUCTOR MFG36 citations93
US6686280B1Feb 3, 2004

Sidewall coverage for copper damascene filling

TAIWAN SEMICONDUCTOR MFG23 citations93
US6576543B2Jun 10, 2003

Method for selectively depositing diffusion barriers

TAIWAN SEMICONDUCTOR MFG29 citations93
US6551915B2Apr 22, 2003

Thermal annealing/hydrogen containing plasma method for forming structurally stable low contact resistance damascene conductor structure

TAIWAN SEMICONDUCTOR MFG21 citations93
US6531389B1Mar 11, 2003

Method for forming incompletely landed via with attenuated contact resistance

TAIWAN SEMICONDUCTOR MFG41 citations93
US6492269B1Dec 10, 2002

Methods for edge alignment mark protection during damascene electrochemical plating of copper

TAIWAN SEMICONDUCTOR MFG50 citations93
US6413863B1Jul 2, 2002

Method to resolve the passivation surface roughness during formation of the AlCu pad for the copper process

TAIWAN SEMICONDUCTOR MFG28 citations93
US6387800B1May 14, 2002

Method of forming barrier and seed layers for electrochemical deposition of copper

TAIWAN SEMICONDUCTOR MFG42 citations93
US6350688B1Feb 26, 2002

Via RC improvement for copper damascene and beyond technology

TAIWAN SEMICONDUCTOR MFG35 citations93
US6319822B1Nov 20, 2001

Process for forming an integrated contact or via

TAIWAN SEMICONDUCTOR MFG46 citations93
US6297158B1Oct 2, 2001

Stress management of barrier metal for resolving CU line corrosion

TAIWAN SEMICONDUCTOR MFG22 citations93
US6277745B1Aug 21, 2001

Passivation method of post copper dry etching

TAIWAN SEMICONDUCTOR MFG43 citations93
US6221758B1Apr 24, 2001

Effective diffusion barrier process and device manufactured thereby

TAIWAN SEMICONDUCTOR MFG16 citations93
US6099701AAug 8, 2000

AlCu electromigration (EM) resistance

TAIWAN SEMICONDUCTOR MFG22 citations93

TAIWAN SEMICONDUCTOR MFG CO LTD

7 patents

CHEN MING-FA

1 patent

CHANG HUNG-PIN

1 patent

Showing the top 50 of 379 patents by PatentIndex Score.