P

Inventor

KIRIHATA TOSHIAKI

US145 patents
⚠️ This page may combine multiple inventors who share the name “KIRIHATA TOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

44 patents
US5822268AOct 13, 1998

Hierarchical column select line architecture for multi-bank DRAMs

IBM97 citations98
US6141267AOct 31, 2000

Defect management engine for semiconductor memories and memory systems

IBM68 citations96
US6081021AJun 27, 2000

Conductor-insulator-conductor structure

IBM76 citations96
US6038634AMar 14, 2000

Intra-unit block addressing system for memory

IBM112 citations96
US5764655AJun 9, 1998

Built in self test with memory

IBM193 citations96
US5615164AMar 25, 1997

Latched row decoder for a random access memory

IBM70 citations96
US5499211AMar 12, 1996

Bit-line precharge current limiter for CMOS dynamic memories

IBM57 citations96
US6230290B1May 8, 2001

Method of self programmed built in self test

IBM54 citations95
US7061821B2Jun 13, 2006

Address wrap function for addressable memory devices

IBM26 citations93
US6967885B2Nov 22, 2005

Concurrent refresh mode with distributed row address counters in an embedded DRAM

IBM33 citations93
US6522171B2Feb 18, 2003

Method of reducing sub-threshold leakage in circuits during standby mode

IBM33 citations93
US6326800B1Dec 4, 2001

Self-adjusting burn-in test

IBM40 citations93
US6266272B1Jul 24, 2001

Partially non-volatile dynamic random access memory formed by a plurality of single transistor cells used as DRAM cells and EPROM cells

IBM78 citations93
US6243306B1Jun 5, 2001

Defect management engine for generating a unified address to access memory cells in a primary and a redundancy memory array

IBM37 citations93
US6240043B1May 29, 2001

SDRAM with a maskable input

IBM26 citations93
US5978291ANov 2, 1999

Sub-block redundancy replacement for a giga-bit scale DRAM

IBM22 citations93
US5963489AOct 5, 1999

Method and apparatus for redundancy word line replacement in a repairable semiconductor memory device

IBM43 citations93
US5949732ASep 7, 1999

Method of structuring a multi-bank DRAM into a hierarchical column select line architecture

IBM47 citations93
US5940335AAug 17, 1999

Prioritizing the repair of faults in a semiconductor memory device

IBM36 citations93
US5831914ANov 3, 1998

Variable size redundancy replacement architecture to make a memory fault-tolerant

IBM27 citations93
US5831913ANov 3, 1998

Method of making a memory fault-tolerant using a variable size redundancy replacement configuration

IBM34 citations93
US5619460AApr 8, 1997

Method of testing a random access memory

IBM30 citations93
US5610867AMar 11, 1997

DRAM signal margin test method

IBM32 citations93
US5544113AAug 6, 1996

Random access memory having a flexible array redundancy scheme

IBM26 citations93
US9268863B2Feb 23, 2016

Hierarchical in-memory sort engine

IBM14 citations92
US9038133B2May 19, 2015

Self-authenticating of chip based on intrinsic features

IBM24 citations92
US9025386B1May 5, 2015

Embedded charge trap multi-time-programmable-read-only-memory for high performance logic technology

IBM27 citations92
US7817455B2Oct 19, 2010

Random access electrically programmable e-fuse ROM

IBM31 citations92
US7307911B1Dec 11, 2007

Apparatus and method for improving sensing margin of electrically programmable fuses

IBM30 citations92
US7145829B1Dec 5, 2006

Single cycle refresh of multi-port dynamic random access memory (DRAM)

IBM35 citations92
US7093171B2Aug 15, 2006

Flexible row redundancy system

IBM14 citations92
US6845059B1Jan 18, 2005

High performance gain cell architecture

IBM34 citations92
US6845033B2Jan 18, 2005

Structure and system-on-chip integration of a two-transistor and two-capacitor memory cell for trench technology

IBM46 citations92
US6747890B1Jun 8, 2004

Gain cell structure with deep trench capacitor

IBM35 citations92
US6195300B1Feb 27, 2001

CBR refresh control for the redundancy array

IBM22 citations92
US6166981ADec 26, 2000

Method for addressing electrical fuses

IBM31 citations92
US6108798AAug 22, 2000

Self programmed built in self test

IBM30 citations92
US5970000AOct 19, 1999

Repairable semiconductor integrated circuit memory by selective assignment of groups of redundancy elements to domains

IBM22 citations92
US5721485AFeb 24, 1998

High performance on-chip voltage regulator designs

IBM40 citations92
US5691946ANov 25, 1997

Row redundancy block architecture

IBM41 citations92
US5339274AAug 16, 1994

Variable bitline precharge voltage sensing technique for DRAM structures

IBM37 citations92
US5257232AOct 26, 1993

Sensing circuit for semiconductor memory with limited bitline voltage swing

IBM30 citations92
US6829682B2Dec 7, 2004

Destructive read architecture for dynamic random access memories

IBM19 citations91
US6674676B1Jan 6, 2004

Column redundancy system and method for a micro-cell embedded DRAM (e-DRAM) architecture

IBM17 citations91

SIEMENS AG

5 patents

INFINEON TECHNOLOGIES AG

1 patent

Showing the top 50 of 145 patents by PatentIndex Score.