Inventor
KIRIHATA TOSHIAKI
US145 patents
⚠️ This page may combine multiple inventors who share the name “KIRIHATA TOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
44 patentsUS5822268AOct 13, 1998
Hierarchical column select line architecture for multi-bank DRAMs
IBM97 citations98
US6141267AOct 31, 2000
Defect management engine for semiconductor memories and memory systems
IBM68 citations96
US6081021AJun 27, 2000
Conductor-insulator-conductor structure
IBM76 citations96
US6038634AMar 14, 2000
Intra-unit block addressing system for memory
IBM112 citations96
US5764655AJun 9, 1998
Built in self test with memory
IBM193 citations96
US5615164AMar 25, 1997
Latched row decoder for a random access memory
IBM70 citations96
US5499211AMar 12, 1996
Bit-line precharge current limiter for CMOS dynamic memories
IBM57 citations96
US6230290B1May 8, 2001
Method of self programmed built in self test
IBM54 citations95
US7061821B2Jun 13, 2006
Address wrap function for addressable memory devices
IBM26 citations93
US6967885B2Nov 22, 2005
Concurrent refresh mode with distributed row address counters in an embedded DRAM
IBM33 citations93
US6522171B2Feb 18, 2003
Method of reducing sub-threshold leakage in circuits during standby mode
IBM33 citations93
US6326800B1Dec 4, 2001
Self-adjusting burn-in test
IBM40 citations93
US6266272B1Jul 24, 2001
Partially non-volatile dynamic random access memory formed by a plurality of single transistor cells used as DRAM cells and EPROM cells
IBM78 citations93
US6243306B1Jun 5, 2001
Defect management engine for generating a unified address to access memory cells in a primary and a redundancy memory array
IBM37 citations93
US6240043B1May 29, 2001
SDRAM with a maskable input
IBM26 citations93
US5978291ANov 2, 1999
Sub-block redundancy replacement for a giga-bit scale DRAM
IBM22 citations93
US5963489AOct 5, 1999
Method and apparatus for redundancy word line replacement in a repairable semiconductor memory device
IBM43 citations93
US5949732ASep 7, 1999
Method of structuring a multi-bank DRAM into a hierarchical column select line architecture
IBM47 citations93
US5940335AAug 17, 1999
Prioritizing the repair of faults in a semiconductor memory device
IBM36 citations93
US5831914ANov 3, 1998
Variable size redundancy replacement architecture to make a memory fault-tolerant
IBM27 citations93
US5831913ANov 3, 1998
Method of making a memory fault-tolerant using a variable size redundancy replacement configuration
IBM34 citations93
US5619460AApr 8, 1997
Method of testing a random access memory
IBM30 citations93
US5610867AMar 11, 1997
DRAM signal margin test method
IBM32 citations93
US5544113AAug 6, 1996
Random access memory having a flexible array redundancy scheme
IBM26 citations93
US9268863B2Feb 23, 2016
Hierarchical in-memory sort engine
IBM14 citations92
US9038133B2May 19, 2015
Self-authenticating of chip based on intrinsic features
IBM24 citations92
US9025386B1May 5, 2015
Embedded charge trap multi-time-programmable-read-only-memory for high performance logic technology
IBM27 citations92
US7817455B2Oct 19, 2010
Random access electrically programmable e-fuse ROM
IBM31 citations92
US7307911B1Dec 11, 2007
Apparatus and method for improving sensing margin of electrically programmable fuses
IBM30 citations92
US7145829B1Dec 5, 2006
Single cycle refresh of multi-port dynamic random access memory (DRAM)
IBM35 citations92
US7093171B2Aug 15, 2006
Flexible row redundancy system
IBM14 citations92
US6845059B1Jan 18, 2005
High performance gain cell architecture
IBM34 citations92
US6845033B2Jan 18, 2005
Structure and system-on-chip integration of a two-transistor and two-capacitor memory cell for trench technology
IBM46 citations92
US6747890B1Jun 8, 2004
Gain cell structure with deep trench capacitor
IBM35 citations92
US6195300B1Feb 27, 2001
CBR refresh control for the redundancy array
IBM22 citations92
US6166981ADec 26, 2000
Method for addressing electrical fuses
IBM31 citations92
US6108798AAug 22, 2000
Self programmed built in self test
IBM30 citations92
US5970000AOct 19, 1999
Repairable semiconductor integrated circuit memory by selective assignment of groups of redundancy elements to domains
IBM22 citations92
US5721485AFeb 24, 1998
High performance on-chip voltage regulator designs
IBM40 citations92
US5691946ANov 25, 1997
Row redundancy block architecture
IBM41 citations92
US5339274AAug 16, 1994
Variable bitline precharge voltage sensing technique for DRAM structures
IBM37 citations92
US5257232AOct 26, 1993
Sensing circuit for semiconductor memory with limited bitline voltage swing
IBM30 citations92
US6829682B2Dec 7, 2004
Destructive read architecture for dynamic random access memories
IBM19 citations91
US6674676B1Jan 6, 2004
Column redundancy system and method for a micro-cell embedded DRAM (e-DRAM) architecture
IBM17 citations91
SIEMENS AG
5 patentsUS5917744AJun 29, 1999
Semiconductor memory having hierarchical bit line architecture with interleaved master bitlines
SIEMENS AG142 citations98
US5864496AJan 26, 1999
High density semiconductor memory having diagonal bit lines and dual word lines
SIEMENS AG98 citations98
US6069815AMay 30, 2000
Semiconductor memory having hierarchical bit line and/or word line architecture
SIEMENS AG29 citations93
US5831912ANov 3, 1998
Semiconductor memory having space-efficient layout
SIEMENS AG24 citations93
US6052318AApr 18, 2000
Repairable semiconductor memory circuit having parrel redundancy replacement wherein redundancy elements replace failed elements
SIEMENS AG22 citations92
INFINEON TECHNOLOGIES AG
1 patentShowing the top 50 of 145 patents by PatentIndex Score.