Inventor
SU LILLY
TW20 patents
⚠️ This page may combine multiple inventors who share the name “SU LILLY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS9953875B1Apr 24, 2018
Contact resistance control in epitaxial structures of finFET
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations92
US9905641B2Feb 27, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10103249B2Oct 16, 2018
FinFET device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10170370B2Jan 1, 2019
Contact resistance control in epitaxial structures of finFET
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations82
US11948999B2Apr 2, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10854602B2Dec 1, 2020
FinFET device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12471311B2Nov 11, 2025
Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11430878B2Aug 30, 2022
Method for fabricating semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11257951B2Feb 22, 2022
Method of making semiconductor device having first and second epitaxial materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10177143B2Jan 8, 2019
FinFET device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10854748B2Dec 1, 2020
Semiconductor device having first and second epitaxial materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9842930B2Dec 12, 2017
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9728641B2Aug 8, 2017
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9412868B2Aug 9, 2016
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9401426B2Jul 26, 2016
Semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10749013B2Aug 18, 2020
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9356136B2May 31, 2016
Engineered source/drain region for n-Type MOSFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
US9831343B2Nov 28, 2017
Semiconductor device having NFET structure and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations38