Inventor
HINO SHIRO
JP44 patents
⚠️ This page may combine multiple inventors who share the name “HINO SHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
33 patentsUS9214458B2Dec 15, 2015
Semiconductor device
MITSUBISHI ELECTRIC CORP9 citations84
US10374075B2Aug 6, 2019
Silicon carbide semiconductor device and manufacturing method for the same
MITSUBISHI ELECTRIC CORP7 citations82
US9825164B2Nov 21, 2017
Silicon carbide semiconductor device and manufacturing method for same
MITSUBISHI ELECTRIC CORP5 citations73
US9614029B2Apr 4, 2017
Trench-gate type semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP2 citations73
US9577086B2Feb 21, 2017
Semiconductor device
MITSUBISHI ELECTRIC CORP5 citations73
US10128370B2Nov 13, 2018
Semiconductor device
MITSUBISHI ELECTRIC CORP3 citations72
US11355627B2Jun 7, 2022
Silicon carbide semiconductor device and power converter
MITSUBISHI ELECTRIC CORP2 citations71
US11189720B2Nov 30, 2021
Silicon carbide semiconductor device and power converter
MITSUBISHI ELECTRIC CORP2 citations71
US9985093B2May 29, 2018
Trench-gate type semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP1 citations63
US12131906B2Oct 29, 2024
Method for fabricating silicon carbide semiconductor device and power conversion device using the silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations62
US11049931B2Jun 29, 2021
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations62
US11682723B2Jun 20, 2023
Silicon carbide semiconductor device and power converter
MITSUBISHI ELECTRIC CORP0 citations61
US10707341B2Jul 7, 2020
Semiconductor device
MITSUBISHI ELECTRIC CORP1 citations61
US12183774B2Dec 31, 2024
Power converter
MITSUBISHI ELECTRIC CORP0 citations60
US11646369B2May 9, 2023
Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
MITSUBISHI ELECTRIC CORP1 citations60
US10991822B2Apr 27, 2021
Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
MITSUBISHI ELECTRIC CORP0 citations60
US12363943B2Jul 15, 2025
Semiconductor device and power conversion device
MITSUBISHI ELECTRIC CORP0 citations52
US11309416B2Apr 19, 2022
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US10559652B2Feb 11, 2020
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations51
US12513976B2Dec 30, 2025
Silicon carbide semiconductor device and power conversion device
MITSUBISHI ELECTRIC CORP0 citations50
US12279447B2Apr 15, 2025
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations50
US12057496B2Aug 6, 2024
Silicon carbide semiconductor device and power converter
MITSUBISHI ELECTRIC CORP0 citations50
US11888057B2Jan 30, 2024
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations50
US11508840B2Nov 22, 2022
Silicon carbide semiconductor device and power converter
MITSUBISHI ELECTRIC CORP0 citations50
US11222973B2Jan 11, 2022
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations50
US11049963B2Jun 29, 2021
Silicon carbide semiconductor device and power converter
MITSUBISHI ELECTRIC CORP0 citations50
US10665713B2May 26, 2020
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations50
US11804555B2Oct 31, 2023
Semiconductor device and power conversion device
MITSUBISHI ELECTRIC CORP0 citations49
US10559653B2Feb 11, 2020
Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations49
US10475920B2Nov 12, 2019
Semiconductor device and semiconductor device manufacturing method
MITSUBISHI ELECTRIC CORP0 citations41
US9954072B2Apr 24, 2018
Silicon-carbide semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP0 citations41
US10665679B2May 26, 2020
Silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP0 citations39
US10020367B2Jul 10, 2018
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations39