Inventor
HORIGUCHI NAOTO
BE32 patents
⚠️ This page may combine multiple inventors who share the name “HORIGUCHI NAOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IMEC VZW
15 patentsUS10607896B2Mar 31, 2020
Method of forming gate of semiconductor device and semiconductor device having same
IMEC VZW9 citations83
US11367662B2Jun 21, 2022
Semiconductor devices and methods of forming the same
IMEC VZW3 citations72
US11114435B2Sep 7, 2021
FinFET having locally higher fin-to-fin pitch
IMEC VZW2 citations72
US9633891B2Apr 25, 2017
Method for forming a transistor structure comprising a fin-shaped channel structure
IMEC VZW4 citations72
US11515399B2Nov 29, 2022
Self-aligned contacts for walled nanosheet and forksheet field effect transistor devices
IMEC VZW3 citations71
US10720363B2Jul 21, 2020
Method of forming vertical transistor device
IMEC VZW6 citations71
US9105746B2Aug 11, 2015
Method for manufacturing a field effect transistor of a non-planar type
IMEC VZW4 citations71
US10361268B2Jul 23, 2019
Internal spacers for nanowire semiconductor devices
IMEC VZW3 citations70
US12484289B2Nov 25, 2025
Method for forming a stacked transistor device
IMEC VZW0 citations52
US12324175B2Jun 3, 2025
FET device and a method for forming a FET device
IMEC VZW0 citations52
US12446246B2Oct 14, 2025
Field-effect transistor device
IMEC VZW0 citations51
US12457785B2Oct 28, 2025
Method for forming a stacked FET device
IMEC VZW0 citations50
US11462443B2Oct 4, 2022
Self-aligned contacts for nanosheet field effect transistor devices
IMEC VZW0 citations50
US10522552B2Dec 31, 2019
Method of fabricating vertical transistor device
IMEC VZW0 citations39
US10439036B2Oct 8, 2019
Transistor device with reduced hot carrier injection effect
IMEC VZW0 citations35
FUJITSU LTD
10 patentsUS6351410B1Feb 26, 2002
Ferromagnetic tunnel junction random access memory, spin valve random access memory, single ferromagnetic layer random access memory, and memory cell array using the same
FUJITSU LTD70 citations96
US6054349AApr 25, 2000
Single-electron device including therein nanocrystals
FUJITSU LTD84 citations95
US5936258AAug 10, 1999
Optical semiconductor memory device and read/write method therefor
FUJITSU LTD55 citations94
US6815759B2Nov 9, 2004
Semiconductor memory with floating gate type FET
FUJITSU LTD21 citations92
US6774430B2Aug 10, 2004
Non-volatile semiconductor memory device having gate insulating film with thick end sections
FUJITSU LTD21 citations92
US6462374B2Oct 8, 2002
Semiconductor device and method for fabricating the same
FUJITSU LTD19 citations92
US5734174AMar 31, 1998
Photo hole burning memory
FUJITSU LTD14 citations74
US7235470B2Jun 26, 2007
Semiconductor device and manufacturing method thereof
FUJITSU LTD0 citations52
US6828629B2Dec 7, 2004
Semiconductor device and method of fabricating the same
FUJITSU LTD1 citations52
US7468297B2Dec 23, 2008
Method of manufacturing semiconductor device
FUJITSU LTD1 citations48
NIPPON SHEET GLASS CO LTD
3 patentsLINE CORP
2 patentsUS10904608B2Jan 26, 2021
Display control method, terminal, and non-transitory computer readable recording medium storing a computer program
LINE CORP3 citations73
US11743529B2Aug 29, 2023
Display control method, terminal, and non-transitory computer readable recording medium storing a computer program
LINE CORP0 citations62