Inventor
HSIEH CHIH-REN
TW35 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH CHIH-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
34 patentsUS9847399B1Dec 19, 2017
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9831134B1Nov 28, 2017
Method of manufacturing a semiconductor device having deep wells
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11864381B2Jan 2, 2024
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11854823B2Dec 26, 2023
Integrated circuit device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11217597B2Jan 4, 2022
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12356673B2Jul 8, 2025
Select gate spacer formation to facilitate embedding of split gate flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12014966B2Jun 18, 2024
Semiconductor memory device having composite dielectric film structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11895836B2Feb 6, 2024
Anti-dishing structure for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11637046B2Apr 25, 2023
Semiconductor memory device having composite dielectric film structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424255B2Aug 23, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11380769B2Jul 5, 2022
Select gate spacer formation to facilitate embedding of split gate flash memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264292B2Mar 1, 2022
Cell-like floating-gate test structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11239246B2Feb 1, 2022
Cell boundary structure for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11233156B2Jan 25, 2022
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11195834B2Dec 7, 2021
Semiconductor device having deep wells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11183571B2Nov 23, 2021
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11088040B2Aug 10, 2021
Cell-like floating-gate test structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069773B2Jul 20, 2021
Contact-to-gate monitor pattern and fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031409B2Jun 8, 2021
Cell boundary structure for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031294B2Jun 8, 2021
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12400867B2Aug 26, 2025
Integrated circuit device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12284806B2Apr 22, 2025
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11239089B2Feb 1, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11211297B2Dec 28, 2021
Method for testing bridging in adjacent semiconductor devices and test structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations59
US10644000B2May 5, 2020
Semiconductor device having deep wells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10134644B2Nov 20, 2018
Method of manufacturing a semiconductor device having deep wells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10049939B2Aug 14, 2018
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10804281B2Oct 13, 2020
Anti-dishing structure for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10644013B2May 5, 2020
Cell boundary structure for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10535574B2Jan 14, 2020
Cell-like floating-gate test structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10734292B2Aug 4, 2020
Method for testing bridging in adjacent semiconductor devices and test structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10276458B2Apr 30, 2019
Method for testing bridging in adjacent semiconductor devices and test structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10879251B2Dec 29, 2020
Integrated circuit and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46
US10770469B2Sep 8, 2020
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46