Inventor
KIM JONGSEOB
KR26 patents
⚠️ This page may combine multiple inventors who share the name “KIM JONGSEOB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
25 patentsUS11581269B2Feb 14, 2023
Semiconductor thin film structures and electronic devices including the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US12288738B2Apr 29, 2025
Semiconductor device package and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US12002879B2Jun 4, 2024
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11757029B2Sep 12, 2023
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11069802B2Jul 20, 2021
Field effect transistor including gradually varying composition channel
SAMSUNG ELECTRONICS CO LTD2 citations71
US12218233B2Feb 4, 2025
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations63
US12199174B2Jan 14, 2025
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations63
US12426294B2Sep 23, 2025
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations62
US12113110B2Oct 8, 2024
Nitride semiconductor device with field effect gate
SAMSUNG ELECTRONICS CO LTD0 citations62
US11387358B2Jul 12, 2022
Semiconductor structure, transistor including the same, and method of manufacturing transistor
SAMSUNG ELECTRONICS CO LTD1 citations62
US11227890B2Jan 18, 2022
Light-emitting devices including driving devices, methods of manufacturing the same, and display devices including light emitting device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12507430B2Dec 23, 2025
Power device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12464793B2Nov 4, 2025
Nitride semiconductor buffer structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12218206B2Feb 4, 2025
Power semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12119397B2Oct 15, 2024
Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12040391B2Jul 16, 2024
Power device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11335802B2May 17, 2022
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11888059B2Jan 30, 2024
Field effect transistor including gradually varying composition channel
SAMSUNG ELECTRONICS CO LTD0 citations60
US7829937B2Nov 9, 2010
Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12489038B2Dec 2, 2025
Semiconductor device package
SAMSUNG ELECTRONICS CO LTD0 citations50
US12317536B2May 27, 2025
Semiconductor device and power switching system including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12278281B2Apr 15, 2025
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations50
US11837642B2Dec 5, 2023
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11728419B2Aug 15, 2023
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations50
US11588046B2Feb 21, 2023
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations50