Inventor
OH JAEJOON
KR19 patents
Patents
19 patentsUS11581269B2Feb 14, 2023
Semiconductor thin film structures and electronic devices including the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US12288738B2Apr 29, 2025
Semiconductor device package and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US12002879B2Jun 4, 2024
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11757029B2Sep 12, 2023
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11069802B2Jul 20, 2021
Field effect transistor including gradually varying composition channel
SAMSUNG ELECTRONICS CO LTD2 citations71
US12218233B2Feb 4, 2025
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations63
US12113110B2Oct 8, 2024
Nitride semiconductor device with field effect gate
SAMSUNG ELECTRONICS CO LTD0 citations62
US12464793B2Nov 4, 2025
Nitride semiconductor buffer structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12119397B2Oct 15, 2024
Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11784367B2Oct 10, 2023
Metal-air battery apparatus and method of controlling temperature thereof
SAMSUNG ELECTRONICS CO LTD0 citations61
US11522240B2Dec 6, 2022
Metal-air battery apparatus and method of controlling temperature thereof
SAMSUNG ELECTRONICS CO LTD0 citations61
US11335802B2May 17, 2022
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11888059B2Jan 30, 2024
Field effect transistor including gradually varying composition channel
SAMSUNG ELECTRONICS CO LTD0 citations60
US12489038B2Dec 2, 2025
Semiconductor device package
SAMSUNG ELECTRONICS CO LTD0 citations50
US12317536B2May 27, 2025
Semiconductor device and power switching system including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12278281B2Apr 15, 2025
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations50
US11837642B2Dec 5, 2023
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11728419B2Aug 15, 2023
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations50
US11588046B2Feb 21, 2023
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD0 citations50