P

Inventor

HWANG SUNKYU

KR18 patents
⚠️ This page may combine multiple inventors who share the name “HWANG SUNKYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

17 patents
US11581269B2Feb 14, 2023

Semiconductor thin film structures and electronic devices including the same

SAMSUNG ELECTRONICS CO LTD10 citations83
US12288738B2Apr 29, 2025

Semiconductor device package and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US12002879B2Jun 4, 2024

High electron mobility transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US11069802B2Jul 20, 2021

Field effect transistor including gradually varying composition channel

SAMSUNG ELECTRONICS CO LTD2 citations71
US12199174B2Jan 14, 2025

High electron mobility transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations63
US12507430B2Dec 23, 2025

Power device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12464793B2Nov 4, 2025

Nitride semiconductor buffer structure and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12218206B2Feb 4, 2025

Power semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12119397B2Oct 15, 2024

Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12040391B2Jul 16, 2024

Power device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11888059B2Jan 30, 2024

Field effect transistor including gradually varying composition channel

SAMSUNG ELECTRONICS CO LTD0 citations60
US12489038B2Dec 2, 2025

Semiconductor device package

SAMSUNG ELECTRONICS CO LTD0 citations50
US12317536B2May 27, 2025

Semiconductor device and power switching system including the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US12278281B2Apr 15, 2025

High electron mobility transistor

SAMSUNG ELECTRONICS CO LTD0 citations50
US11837642B2Dec 5, 2023

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US11728419B2Aug 15, 2023

High electron mobility transistor

SAMSUNG ELECTRONICS CO LTD0 citations50
US11588046B2Feb 21, 2023

High electron mobility transistor

SAMSUNG ELECTRONICS CO LTD0 citations50

CORELOGIC SOLUTIONS LLC

1 patent