Inventor
CHANG JUNG-HUNG
TW68 patents
Patents
50 patentsUS11315925B2Apr 26, 2022
Uniform gate width for nanostructure devices
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US10944009B2Mar 9, 2021
Methods of fabricating a FinFET device with wrap-around silicide source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12342616B2Jun 24, 2025
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75
US11855096B2Dec 26, 2023
Uniform gate width for nanostructure devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12074204B2Aug 27, 2024
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11996483B2May 28, 2024
FET with wrap-around silicide and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11978674B2May 7, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11967594B2Apr 23, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11916122B2Feb 27, 2024
Gate all around transistor with dual inner spacers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11695076B2Jul 4, 2023
FET with wrap-around silicide and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450754B2Sep 20, 2022
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450663B2Sep 20, 2022
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11417777B2Aug 16, 2022
Enlargement of GAA nanostructure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11398550B2Jul 26, 2022
Semiconductor device with facet S/D feature and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11322409B2May 3, 2022
Multi-gate devices and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11309424B2Apr 19, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11264502B2Mar 1, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11205711B2Dec 21, 2021
Selective inner spacer implementations
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11121037B2Sep 14, 2021
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10847373B2Nov 24, 2020
Methods of forming silicide contact in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12543352B2Feb 3, 2026
Integrated circuit with bottom dielectric insulators and fin sidewall spacers for reducing source/drain leakage currents
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12342587B2Jun 24, 2025
Integrated circuit with nanostructure transistors and bottom dielectric insulators
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12538570B2Jan 27, 2026
Reduction of gate-drain capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12507445B2Dec 23, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12446305B2Oct 14, 2025
Uniform gate width for nanostructure devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12446319B2Oct 14, 2025
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12446275B2Oct 14, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12382666B2Aug 5, 2025
Enlargement of GAA nanostructure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12347775B2Jul 1, 2025
Semiconductor devices with backside power rail and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12349379B2Jul 1, 2025
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12317540B2May 27, 2025
Method for manufacturing semiconductor structure with isolation feature
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12272732B2Apr 8, 2025
Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12107169B2Oct 1, 2024
Contact structure for stacked multi-gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12009216B2Jun 11, 2024
Methods of forming silicide contact in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12009215B2Jun 11, 2024
Semiconductor device structure with silicide layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11901364B2Feb 13, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11764065B2Sep 19, 2023
Methods of forming silicide contact in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11710774B2Jul 25, 2023
Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11699760B2Jul 11, 2023
Contact structure for stacked multi-gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11664230B2May 30, 2023
Semiconductor device structure with silicide
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11581403B2Feb 14, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532626B2Dec 20, 2022
Reduction of gate-drain capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11502034B2Nov 15, 2022
Semiconductor devices with backside power rail and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11309187B2Apr 19, 2022
Methods of forming silicide contact in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11087988B2Aug 10, 2021
Semiconductor device structure with silicide and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12513937B2Dec 30, 2025
Semiconductor devices and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12457798B2Oct 28, 2025
Dielectric liner for field effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12439638B2Oct 7, 2025
FET with wrap-around silicide and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369384B2Jul 22, 2025
Semiconductor device structure including dielectric region with plurality of different oxidation regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336226B2Jun 17, 2025
Semiconductor device structure including stacked nanostructures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
Showing the top 50 of 68 patents by PatentIndex Score.