Inventor
ROSENBERG ROBERT
36 patents
⚠️ This page may combine multiple inventors who share the name “ROSENBERG ROBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
29 patentsUS6451712B1Sep 17, 2002
Method for forming a porous dielectric material layer in a semiconductor device and device formed
IBM123 citations99
US4647494AMar 3, 1987
Silicon/carbon protection of metallic magnetic structures
IBM157 citations99
US6417572B1Jul 9, 2002
Process for producing metal interconnections and product produced thereby
IBM105 citations98
US6342733B1Jan 29, 2002
Reduced electromigration and stressed induced migration of Cu wires by surface coating
IBM506 citations98
US5540785AJul 30, 1996
Fabrication of defect free silicon on an insulating substrate
IBM106 citations98
US5462883AOct 31, 1995
Method of fabricating defect-free silicon on an insulating substrate
IBM81 citations96
US4599277AJul 8, 1986
Control of the sintering of powdered metals
IBM65 citations95
US5008207AApr 16, 1991
Method of fabricating a narrow base transistor
IBM57 citations94
US4062038ADec 6, 1977
Radiation responsive device
IBM73 citations94
US4132571AJan 2, 1979
Growth of polycrystalline semiconductor film with intermetallic nucleating layer
IBM42 citations93
US3996095ADec 7, 1976
Epitaxial process of forming ferrite, Fe3 O4 and γFe2 O3 thin films on special materials
IBM56 citations93
US7119018B2Oct 10, 2006
Copper conductor
IBM20 citations92
US6812143B2Nov 2, 2004
Process of forming copper structures
IBM19 citations92
US6787912B2Sep 7, 2004
Barrier material for copper structures
IBM27 citations92
US4482906ANov 13, 1984
Gallium aluminum arsenide integrated circuit structure using germanium
IBM44 citations92
US6452276B1Sep 17, 2002
Ultra thin, single phase, diffusion barrier for metal conductors
IBM38 citations91
US5857883AJan 12, 1999
Method of forming perforated metal/ferrite laminated magnet
IBM25 citations91
US7468320B2Dec 23, 2008
Reduced electromigration and stressed induced migration of copper wires by surface coating
IBM14 citations84
US4155785AMay 22, 1979
Process of making a radiation responsive device
IBM19 citations82
US7825516B2Nov 2, 2010
Formation of aligned capped metal lines and interconnections in multilevel semiconductor structures
IBM9 citations78
US6831364B2Dec 14, 2004
Method for forming a porous dielectric material layer in a semiconductor device and device formed
IBM6 citations74
US5986395ANov 16, 1999
Metal/ferrite laminate magnet
IBM6 citations74
US6777809B2Aug 17, 2004
BEOL decoupling capacitor
IBM7 citations73
US6525427B2Feb 25, 2003
BEOL decoupling capacitor
IBM11 citations73
US4389768AJun 28, 1983
Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors
IBM15 citations73
US7495338B2Feb 24, 2009
Metal capped copper interconnect
IBM4 citations63
US6264885B1Jul 24, 2001
Metal/ferrite laminate magnet
IBM2 citations63
US6503641B2Jan 7, 2003
Interconnects with Ti-containing liners
IBM5 citations62
US7172968B2Feb 6, 2007
Ultra thin, single phase, diffusion barrier for metal conductors
IBM0 citations48