P

Inventor

WANG DAVID N

28 patents
⚠️ This page may combine multiple inventors who share the name “WANG DAVID N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

23 patents
US5362526ANov 8, 1994

Plasma-enhanced CVD process using TEOS for depositing silicon oxide

APPLIED MATERIALS INC484 citations99
US5213650AMay 25, 1993

Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer

APPLIED MATERIALS INC530 citations99
US5028565AJul 2, 1991

Process for CVD deposition of tungsten layer on semiconductor wafer

APPLIED MATERIALS INC387 citations99
US5000113AMar 19, 1991

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

APPLIED MATERIALS INC1,100 citations99
US4962063AOct 9, 1990

Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing

APPLIED MATERIALS INC455 citations99
US4892753AJan 9, 1990

Process for PECVD of silicon oxide using TEOS decomposition

APPLIED MATERIALS INC503 citations99
US4872947AOct 10, 1989

CVD of silicon oxide using TEOS decomposition and in-situ planarization process

APPLIED MATERIALS INC522 citations99
US4668365AMay 26, 1987

Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition

APPLIED MATERIALS INC229 citations99
US5292393AMar 8, 1994

Multichamber integrated process system

APPLIED MATERIALS INC386 citations98
US5215619AJun 1, 1993

Magnetic field-enhanced plasma etch reactor

APPLIED MATERIALS INC194 citations98
US5043299AAug 27, 1991

Process for selective deposition of tungsten on semiconductor wafer

APPLIED MATERIALS INC121 citations98
US4951601AAug 28, 1990

Multi-chamber integrated process system

APPLIED MATERIALS INC1,271 citations98
US4842683AJun 27, 1989

Magnetic field-enhanced plasma etch reactor

APPLIED MATERIALS INC410 citations98
US5314845AMay 24, 1994

Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer

APPLIED MATERIALS INC122 citations97
US5204288AApr 20, 1993

Method for planarizing an integrated circuit structure using low melting inorganic material

APPLIED MATERIALS INC67 citations96
US5075256ADec 24, 1991

Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer

APPLIED MATERIALS INC56 citations96
US4412885ANov 1, 1983

Materials and methods for plasma etching of aluminum and aluminum alloys

APPLIED MATERIALS INC54 citations96
US4376672AMar 15, 1983

Materials and methods for plasma etching of oxides and nitrides of silicon

APPLIED MATERIALS INC67 citations96
US5244841ASep 14, 1993

Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing

APPLIED MATERIALS INC39 citations93
US4613400ASep 23, 1986

In-situ photoresist capping process for plasma etching

APPLIED MATERIALS INC43 citations91
US5219485AJun 15, 1993

Materials and methods for etching silicides, polycrystalline silicon and polycides

APPLIED MATERIALS INC32 citations87
US5112435AMay 12, 1992

Materials and methods for etching silicides, polycrystalline silicon and polycides

APPLIED MATERIALS INC22 citations87
US5112776AMay 12, 1992

Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing

APPLIED MATERIALS INC10 citations72

BELL TELEPHONE LABOR INC

5 patents