Inventor
WANG DAVID N
28 patents
⚠️ This page may combine multiple inventors who share the name “WANG DAVID N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
23 patentsUS5362526ANov 8, 1994
Plasma-enhanced CVD process using TEOS for depositing silicon oxide
APPLIED MATERIALS INC484 citations99
US5213650AMay 25, 1993
Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
APPLIED MATERIALS INC530 citations99
US5028565AJul 2, 1991
Process for CVD deposition of tungsten layer on semiconductor wafer
APPLIED MATERIALS INC387 citations99
US5000113AMar 19, 1991
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
APPLIED MATERIALS INC1,100 citations99
US4962063AOct 9, 1990
Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing
APPLIED MATERIALS INC455 citations99
US4892753AJan 9, 1990
Process for PECVD of silicon oxide using TEOS decomposition
APPLIED MATERIALS INC503 citations99
US4872947AOct 10, 1989
CVD of silicon oxide using TEOS decomposition and in-situ planarization process
APPLIED MATERIALS INC522 citations99
US4668365AMay 26, 1987
Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
APPLIED MATERIALS INC229 citations99
US5292393AMar 8, 1994
Multichamber integrated process system
APPLIED MATERIALS INC386 citations98
US5215619AJun 1, 1993
Magnetic field-enhanced plasma etch reactor
APPLIED MATERIALS INC194 citations98
US5043299AAug 27, 1991
Process for selective deposition of tungsten on semiconductor wafer
APPLIED MATERIALS INC121 citations98
US4951601AAug 28, 1990
Multi-chamber integrated process system
APPLIED MATERIALS INC1,271 citations98
US4842683AJun 27, 1989
Magnetic field-enhanced plasma etch reactor
APPLIED MATERIALS INC410 citations98
US5314845AMay 24, 1994
Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
APPLIED MATERIALS INC122 citations97
US5204288AApr 20, 1993
Method for planarizing an integrated circuit structure using low melting inorganic material
APPLIED MATERIALS INC67 citations96
US5075256ADec 24, 1991
Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
APPLIED MATERIALS INC56 citations96
US4412885ANov 1, 1983
Materials and methods for plasma etching of aluminum and aluminum alloys
APPLIED MATERIALS INC54 citations96
US4376672AMar 15, 1983
Materials and methods for plasma etching of oxides and nitrides of silicon
APPLIED MATERIALS INC67 citations96
US5244841ASep 14, 1993
Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
APPLIED MATERIALS INC39 citations93
US4613400ASep 23, 1986
In-situ photoresist capping process for plasma etching
APPLIED MATERIALS INC43 citations91
US5219485AJun 15, 1993
Materials and methods for etching silicides, polycrystalline silicon and polycides
APPLIED MATERIALS INC32 citations87
US5112435AMay 12, 1992
Materials and methods for etching silicides, polycrystalline silicon and polycides
APPLIED MATERIALS INC22 citations87
US5112776AMay 12, 1992
Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
APPLIED MATERIALS INC10 citations72
BELL TELEPHONE LABOR INC
5 patentsUS4310380AJan 12, 1982
Plasma etching of silicon
BELL TELEPHONE LABOR INC136 citations96
US4256534AMar 17, 1981
Device fabrication by plasma etching
BELL TELEPHONE LABOR INC57 citations96
US4383885AMay 17, 1983
Reactive sputter etching of polysilicon utilizing a chlorine etch gas
BELL TELEPHONE LABOR INC29 citations93
US4333793AJun 8, 1982
High-selectivity plasma-assisted etching of resist-masked layer
BELL TELEPHONE LABOR INC25 citations81
US4171489AOct 16, 1979
Radiation mask structure
BELL TELEPHONE LABOR INC27 citations81