P

Inventor

NISHIOKA YASUSHIRO

JP19 patents
⚠️ This page may combine multiple inventors who share the name “NISHIOKA YASUSHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

13 patents
US5973911AOct 26, 1999

Ferroelectric thin-film capacitor

TEXAS INSTRUMENTS INC99 citations98
US5489548AFeb 6, 1996

Method of forming high-dielectric-constant material electrodes comprising sidewall spacers

TEXAS INSTRUMENTS INC201 citations98
US5656852AAug 12, 1997

High-dielectric-constant material electrodes comprising sidewall spacers

TEXAS INSTRUMENTS INC41 citations96
US5605858AFeb 25, 1997

Method of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodes

TEXAS INSTRUMENTS INC55 citations96
US5554564ASep 10, 1996

Pre-oxidizing high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC84 citations96
US5554866ASep 10, 1996

Pre-oxidizing high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC80 citations96
US5814888ASep 29, 1998

Semiconductor device having a multilayer wiring and the method for fabricating the device

TEXAS INSTRUMENTS INC31 citations93
US6133163AOct 17, 2000

Method for forming a semiconductor multilayer interconnect device using SOG and polyimide

TEXAS INSTRUMENTS INC28 citations92
US5970337AOct 19, 1999

Ferroelectric film capacitor with intergranular insulation

TEXAS INSTRUMENTS INC26 citations92
US5854499ADec 29, 1998

Ferroelectric film capacitor with intergranular insulation

TEXAS INSTRUMENTS INC39 citations92
US5811851ASep 22, 1998

Pre-oxidizing high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC34 citations92
US5635420AJun 3, 1997

Method of making a semiconductor device having a capacitive layer

TEXAS INSTRUMENTS INC35 citations92
US5229333AJul 20, 1993

Method for improving the interface characteristics of CaF2 on silicon

TEXAS INSTRUMENTS INC9 citations73

HITACHI LTD

6 patents