Inventor
YUTANI NAOKI
JP21 patents
⚠️ This page may combine multiple inventors who share the name “YUTANI NAOKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
12 patentsUS6393919B1May 28, 2002
Pressure sensor with a thermal pressure detecting element
MITSUBISHI ELECTRIC CORP35 citations92
US6619130B1Sep 16, 2003
Pressure sensor
MITSUBISHI ELECTRIC CORP9 citations73
US6591683B1Jul 15, 2003
Pressure sensor
MITSUBISHI ELECTRIC CORP7 citations73
US5444484AAug 22, 1995
Solid-state imaging device
MITSUBISHI ELECTRIC CORP18 citations73
US5040038AAug 13, 1991
Solid-state image sensor
MITSUBISHI ELECTRIC CORP15 citations72
US9184307B2Nov 10, 2015
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP3 citations62
US7880763B2Feb 1, 2011
Semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP2 citations62
US6207067B1Mar 27, 2001
Method for fabricating oxide superconducting device
MITSUBISHI ELECTRIC CORP4 citations62
US5060038AOct 22, 1991
Charge sweep solid-state image sensor
MITSUBISHI ELECTRIC CORP4 citations62
US9502553B2Nov 22, 2016
Semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP0 citations52
US10276711B2Apr 30, 2019
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP0 citations50
US8377811B2Feb 19, 2013
Method for manufacturing silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations40
WATANABE HIROSHI
2 patentsUS8963276B2Feb 24, 2015
Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells
WATANABE HIROSHI2 citations62
US8304901B2Nov 6, 2012
Semiconductor device having a groove and a junction termination extension layer surrounding a guard ring layer
WATANABE HIROSHI4 citations62