Inventor

OKAMURA SUSUMU

JP55 patents

⚠️ This page may combine multiple inventors who share the name “OKAMURA SUSUMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OKAMURA SUSUMU

WESTERN DIGITAL TECH INC

BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices

Reversed mode spin torque oscillator with shaped field generation layer

Low magnetic flux density interface layer for spin torque oscillator

Spintronic device having negative interface spin scattering

Spintronic devices with narrow spin polarization layers

Spin torque oscillator device including a high damping field generation layer or a damping enhancing capping layer

Magnetic recording devices having negative polarization layer to enhance spin-transfer torque

Spin transfer torque device with oxide layer beneath the seed layer

Seed layer for spin torque oscillator in microwave assisted magnetic recording device

Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture

Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity

MAMR head with synthetic antiferromagnetic (SAF) coupled notch

Spin torque oscillator having one or more chromium insertion layers for magnetic recording drives

Spin transfer torque (STT) device with multilayer seed layers for magnetic recording and memory

Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot and MRAM devices

Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture

Read sensor with ordered heusler alloy free layer and semiconductor barrier layer

Cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices

BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices

Spin torque oscillator with enhanced spin polarizer

Material having both negative spin polarization and negative anisotropy

Seed layer for spin torque oscillator in microwave assisted magnetic recording device

Magnetic recording devices having negative polarization layer to enhance spin-transfer torque

Spin transfer torque device with oxide layer beneath the seed layer

Spin transfer torque device with oxide layer beneath the seed layer

Magnetic heads having low magnetic coercivity (Hc) and high saturated magnetic flux density (Bs) in ferromagnetic (FM) layer(s) or shield(s) with minimized saturation

Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity

Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices

Recording head with a multilayer spin torque element having positive and negative beta materials

Tunneling magnetoresistive (TMR) device with improved seed layer

Spintronic devices with self-cooling function

Spin torque oscillator with multilayer seed for improved performance and reliability

Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devices

Reversed mode spin torque oscillator with shaped field generation layer

HGST Netherlands BV

Tunneling magnetoresistive (TMR) read head with reduced gap thickness

Low Bs spin-polarizer for spin torque oscillator

Low magnetic flux density interface layer for spin torque oscillator

Stabilizing layer for a spin torque oscillator (STO)

Texture-control layer for spin torque oscillator

Spin torque oscillator with low magnetic moment and high perpendicular magnetic anisotropy material

Negative-polarization spin-torque-oscillator

Capping materials for magnetic read head sensor

Microwave assisted magnetic recording head having spin torque oscillator frequency detection

Spin torque oscillator with high spin torque efficiency and reliability

(unassigned)

LC element and semiconductor device

LC element and semiconductor device having a signal transmission line and LC element manufacturing method

Method of forming a semiconductor device having a LC element

OKAMURA SUSUMU

Magnetic sensor having a hard bias seed structure

Magnetoresistive magnetic head having a cpp element using a heusler alloy layer and a high saturation magnetization layer

IKEDA TAKESHI

Variable inductance element using an inductor conductor