Inventor

LUDIKHUIZE ADRIANUS W

NL23 patents

⚠️ This page may combine multiple inventors who share the name “LUDIKHUIZE ADRIANUS W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LUDIKHUIZE ADRIANUS W

PHILIPS CORP

Semiconductor device with an MOST provided with an extended drain region for high voltages

Semiconductor device having LDMOS transistors and a screening layer

Lateral high-voltage DMOS transistor with drain zone charge draining

Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement

Semiconductor device having a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region

Semiconductor device having floating semiconductor zones

MIS high-voltage element with high-resistivity gate and field-plate

Semiconductor device having a reduced surface field strength

Semiconductor device comprising a half-bridge circuit

Semiconductor device having increased safe operating range

Method of manufacturing a high-voltage semiconductor device

Semiconductor device with improved breakdown voltage characteristics

Semiconductor device having a lateral insulated gate biopolar transistor

Integrated semiconductor circuit having improved breakdown voltage characteristics

DC/AC bridge circuit

Method of manufacturing a semiconductor device, and semiconductor device manufactured by such a method

Semiconductor device with a fast lateral dmost provided with a high-voltage source electrode

Semiconductor device having an improved breakdown voltage-raising structure

Lateral high-voltage transistor suitable for use in emitter followers

Integrated circuit with complementary MOS transistors

Semiconductor device

Controllable impedance attenuator having all connection contacts on one side

NXP BV

SOI device with more immunity from substrate voltage