Inventor
NASU TORU
JP28 patents
⚠️ This page may combine multiple inventors who share the name “NASU TORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
14 patentsUS5837591ANov 17, 1998
Method of manufacturing a semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD47 citations96
US5780351AJul 14, 1998
Semiconductor device having capacitor and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD41 citations95
US6372518B1Apr 16, 2002
Method using unreactive gas anneal and low temperature pretreatment for fabricating layered superlattice materials and making electronic devices including same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US6333528B1Dec 25, 2001
Semiconductor device having a capacitor exhibiting improved moisture resistance
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92
US6169304B1Jan 2, 2001
Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations92
US6015987AJan 18, 2000
Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations82
US6528365B2Mar 4, 2003
Semiconductor memory device and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6528327B2Mar 4, 2003
Method for fabricating semiconductor memory device having a capacitor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations70
US7304341B2Dec 4, 2007
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US7220598B1May 22, 2007
Method of making ferroelectric thin film having a randomly oriented layer and spherical crystal conductor structure
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6781179B2Aug 24, 2004
Semiconductor device having a capacitor comprising an electrode with an iridium oxide film as an oxygen barrier film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6756621B2Jun 29, 2004
Ferroelectric capacitor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6809000B2Oct 26, 2004
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations62
US6734456B2May 11, 2004
Ferroelectric film and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52
MATSUSHITA ELECTRONICS CORP
11 patentsUS6143597ANov 7, 2000
Method of manufacturing capacitor included in semiconductor device and the capacitor thereof
MATSUSHITA ELECTRONICS CORP60 citations96
US5624864AApr 29, 1997
Semiconductor device having capacitor and manufacturing method thereof
MATSUSHITA ELECTRONICS CORP71 citations96
US6326671B1Dec 4, 2001
Semiconductor memory device and method for manufacturing the same
MATSUSHITA ELECTRONICS CORP29 citations93
US5627391AMay 6, 1997
Semiconductor device and method of manufacturing the same
MATSUSHITA ELECTRONICS CORP35 citations93
US6239462B1May 29, 2001
Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same
MATSUSHITA ELECTRONICS CORP24 citations92
US5644158AJul 1, 1997
Semiconductor memory device reducing hydrogen content
MATSUSHITA ELECTRONICS CORP17 citations82
US6294438B1Sep 25, 2001
Semiconductor device having capacitor and manufacturing method thereof
MATSUSHITA ELECTRONICS CORP6 citations74
US6107657AAug 22, 2000
Semiconductor device having capacitor and manufacturing method thereof
MATSUSHITA ELECTRONICS CORP6 citations74
US6046467AApr 4, 2000
Semiconductor device having capacitor
MATSUSHITA ELECTRONICS CORP8 citations74
US5943568AAug 24, 1999
Method of making a semiconductor device
MATSUSHITA ELECTRONICS CORP15 citations74
US5795794AAug 18, 1998
Method for forming a semiconductor device having a capacitor
MATSUSHITA ELECTRONICS CORP12 citations74