P

Inventor

YOSHIGAI MOTOHIKO

JP42 patents
⚠️ This page may combine multiple inventors who share the name “YOSHIGAI MOTOHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

26 patents
US6815228B2Nov 9, 2004

Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

HITACHI LTD60 citations96
US5681424AOct 28, 1997

Plasma processing method

HITACHI LTD54 citations96
US5432315AJul 11, 1995

Plasma process apparatus including ground electrode with protection film

HITACHI LTD68 citations96
US6664738B2Dec 16, 2003

Plasma processing apparatus

HITACHI LTD52 citations95
US6961131B2Nov 1, 2005

Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

HITACHI LTD24 citations93
US6903826B2Jun 7, 2005

Method and apparatus for determining endpoint of semiconductor element fabricating process

HITACHI LTD33 citations93
US6677244B2Jan 13, 2004

Specimen surface processing method

HITACHI LTD18 citations92
US6660647B1Dec 9, 2003

Method for processing surface of sample

HITACHI LTD28 citations92
US6235146B1May 22, 2001

Vacuum treatment system and its stage

HITACHI LTD22 citations92
US5290993AMar 1, 1994

Microwave plasma processing device

HITACHI LTD42 citations92
US7601241B2Oct 13, 2009

Plasma processing apparatus and plasma processing method

HITACHI LTD9 citations84
US6620737B2Sep 16, 2003

Plasma etching method

HITACHI LTD13 citations83
US7411684B2Aug 12, 2008

Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

HITACHI LTD5 citations74
US7126697B2Oct 24, 2006

Method and apparatus for determining endpoint of semiconductor element fabricating process

HITACHI LTD5 citations74
US7009715B2Mar 7, 2006

Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed

HITACHI LTD7 citations74
US6046425AApr 4, 2000

Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber

HITACHI LTD10 citations74
US6838833B2Jan 4, 2005

Plasma processing apparatus

HITACHI LTD10 citations73
US6191045B1Feb 20, 2001

Method of treating surface of sample

HITACHI LTD10 citations73
US6617255B2Sep 9, 2003

Plasma processing method for working the surface of semiconductor devices

HITACHI LTD7 citations72
US7259104B2Aug 21, 2007

Sample surface processing method

HITACHI LTD2 citations63
US7230720B2Jun 12, 2007

Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

HITACHI LTD3 citations63
US6743733B2Jun 1, 2004

Process for producing a semiconductor device including etching using a multi-step etching treatment having different gas compositions in each step

HITACHI LTD4 citations63
US6492277B1Dec 10, 2002

Specimen surface processing method and apparatus

HITACHI LTD4 citations63
US7098138B2Aug 29, 2006

Plasma processing method for working the surface of semiconductor devices

HITACHI LTD2 citations61
US7771607B2Aug 10, 2010

Plasma processing apparatus and plasma processing method

HITACHI LTD1 citations52
US7049243B2May 23, 2006

Surface processing method of a specimen and surface processing apparatus of the specimen

HITACHI LTD0 citations52

HITACHI HIGH TECH CORP

11 patents

HITACH HIGH TECHNOLOGIES CORP

1 patent

YOSHIOKA KEN

1 patent

ITABASHI NAOSHI

1 patent

USUI TATEHITO

1 patent

KITANI RYOUTA

1 patent