Inventor
BILODEAU STEVEN
US11 patents
⚠️ This page may combine multiple inventors who share the name “BILODEAU STEVEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ENTEGRIS INC
7 patentsUS10651045B2May 12, 2020
Compositions and methods for etching silicon nitride-containing substrates
ENTEGRIS INC3 citations68
US10957547B2Mar 23, 2021
Formulations to selectively etch silicon germanium relative to germanium
ENTEGRIS INC1 citations62
US10475658B2Nov 12, 2019
Formulations to selectively etch silicon and germanium
ENTEGRIS INC1 citations62
US10991809B2Apr 27, 2021
Composition and process for selectively etching p-doped polysilicon relative to silicon nitride
ENTEGRIS INC0 citations51
US10290505B2May 14, 2019
Passivation of germanium surfaces
ENTEGRIS INC0 citations50
US10347504B2Jul 9, 2019
Use of non-oxidizing strong acids for the removal of ion-implanted resist
ENTEGRIS INC0 citations39
US10340150B2Jul 2, 2019
Ni:NiGe:Ge selective etch formulations and method of using same
ENTEGRIS INC0 citations38
ADVANCED TECH MATERIALS
3 patentsUS6312816B1Nov 6, 2001
A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
ADVANCED TECH MATERIALS23 citations92
US7022864B2Apr 4, 2006
Ethyleneoxide-silane and bridged silane precursors for forming low k films
ADVANCED TECH MATERIALS12 citations79
US6692569B2Feb 17, 2004
A-site-and/or b-site-modified pbzrtio3 materials and (pb, sr, ca, ba, mg) (zr, ti,nb, ta)o3 films having utility in ferroelectric random access memories and high performance thin film microactuators
ADVANCED TECH MATERIALS11 citations73